| No. |
Part Name |
Description |
Manufacturer |
| 271 |
MIC4469 |
Quad 1.2A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS |
Micrel Semiconductor |
| 272 |
MIC4469BN |
Quad 1.2A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS |
Micrel Semiconductor |
| 273 |
MIC4469BWM |
Quad 1.2A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS |
Micrel Semiconductor |
| 274 |
MIC4469CN |
Quad 1.2A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS |
Micrel Semiconductor |
| 275 |
MIC4469CWM |
Quad 1.2A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS |
Micrel Semiconductor |
| 276 |
MJ3202A |
Complementary NPN-PNP silicon power bipolar transistor |
Motorola |
| 277 |
MJL3281A |
Complementary NPN-PNP Silicon Power Bipolar Transistor |
ON Semiconductor |
| 278 |
MJL3281A-D |
Complementary NPN-PNP Silicon Power Bipolar Transistor |
ON Semiconductor |
| 279 |
MJW1302A |
Complementary NPN-PNP Silicon Power Bipolar Transistors |
ON Semiconductor |
| 280 |
MJW3281A |
Complementary NPN-PNP Silicon Power Bipolar Transistors |
ON Semiconductor |
| 281 |
MJW3281A-D |
Complementary NPN-PNP Silicon Power Bipolar Transistors |
ON Semiconductor |
| 282 |
MRF15060 |
RF POWER BIPOLAR TRANSISTORS |
Motorola |
| 283 |
MRF15060S |
RF POWER BIPOLAR TRANSISTORS |
Motorola |
| 284 |
MRF20030R_D |
MRF20030R 2 GHz, 30 W, 26 V Broadband RF Power Bipolar Transistor - Archived |
Motorola |
| 285 |
MRF20060R_D |
MRF20060R, MRF20060RS 2 GHz, 60 W, 26 V Broadband RF Power Bipolar Transistors - Archived |
Motorola |
| 286 |
NJW44H11 |
80 V NPN, 10 A Power Bipolar Transistor |
ON Semiconductor |
| 287 |
P4KE100 |
81.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 288 |
P4KE100A |
85.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 289 |
P4KE110 |
89.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 290 |
P4KE110A |
94.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 291 |
P4KE120 |
97.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 292 |
P4KE120A |
102.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 293 |
P4KE130 |
105.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 294 |
P4KE130A |
111.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 295 |
P4KE150 |
121.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 296 |
P4KE150A |
128.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 297 |
P4KE160 |
130.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 298 |
P4KE160A |
136.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 299 |
P4KE170 |
138.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 300 |
P4KE170A |
145.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
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