| No. |
Part Name |
Description |
Manufacturer |
| 331 |
P6KE180 |
146.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 332 |
P6KE180A |
154.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 333 |
P6KE200 |
162.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 334 |
P6KE200A |
171.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 335 |
P6KE220 |
175.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 336 |
P6KE220A |
185.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 337 |
P6KE250 |
202.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 338 |
P6KE250A |
202.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 339 |
P6KE300 |
243.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 340 |
P6KE300A |
256.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 341 |
P6KE350 |
284.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 342 |
P6KE350A |
300.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 343 |
P6KE400 |
324.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 344 |
P6KE400A |
342.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 345 |
P6KE440 |
356.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 346 |
P6KE440A |
376.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 347 |
PHPT60406NY |
40 V, 6 A NPN high power bipolar transistor |
Nexperia |
| 348 |
PHPT60406PY |
40 V, 6 A PNP high power bipolar transistor |
Nexperia |
| 349 |
PHPT60410NY |
40 V, 10 A NPN high power bipolar transistor |
Nexperia |
| 350 |
PHPT60410PY |
40 V, 10 A PNP high power bipolar transistor |
Nexperia |
| 351 |
PHPT60415NY |
40 V, 15 A NPN high power bipolar transistor |
Nexperia |
| 352 |
PHPT60415PY |
40 V, 15 A PNP high power bipolar transistor |
Nexperia |
| 353 |
PHPT60603NY |
60V, 3 A NPN high power bipolar transistor |
Nexperia |
| 354 |
PHPT60603PY |
60 V, 3 A PNP high power bipolar transistor |
Nexperia |
| 355 |
PHPT60606NY |
60 V, 6 A NPN high power bipolar transistor |
Nexperia |
| 356 |
PHPT60606PY |
60 V, 6 A PNP high power bipolar transistor |
Nexperia |
| 357 |
PHPT60610NY |
60 V, 10 A NPN high power bipolar transistor |
Nexperia |
| 358 |
PHPT60610PY |
60 V, 10 A PNP high power bipolar transistor |
Nexperia |
| 359 |
PHPT61002NYC |
100V, 2 A NPN high power bipolar transistor |
Nexperia |
| 360 |
PHPT61002NYCLH |
100 V, 2 A NPN high power bipolar transistor |
Nexperia |
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