No. |
Part Name |
Description |
Manufacturer |
331 |
P6KE180 |
146.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
332 |
P6KE180A |
154.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
333 |
P6KE200 |
162.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
334 |
P6KE200A |
171.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
335 |
P6KE220 |
175.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
336 |
P6KE220A |
185.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
337 |
P6KE250 |
202.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
338 |
P6KE250A |
202.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
339 |
P6KE300 |
243.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
340 |
P6KE300A |
256.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
341 |
P6KE350 |
284.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
342 |
P6KE350A |
300.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
343 |
P6KE400 |
324.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
344 |
P6KE400A |
342.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
345 |
P6KE440 |
356.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
346 |
P6KE440A |
376.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
347 |
PHPT60406NY |
40 V, 6 A NPN high power bipolar transistor |
Nexperia |
348 |
PHPT60406PY |
40 V, 6 A PNP high power bipolar transistor |
Nexperia |
349 |
PHPT60410NY |
40 V, 10 A NPN high power bipolar transistor |
Nexperia |
350 |
PHPT60410PY |
40 V, 10 A PNP high power bipolar transistor |
Nexperia |
351 |
PHPT60415NY |
40 V, 15 A NPN high power bipolar transistor |
Nexperia |
352 |
PHPT60415PY |
40 V, 15 A PNP high power bipolar transistor |
Nexperia |
353 |
PHPT60603NY |
60V, 3 A NPN high power bipolar transistor |
Nexperia |
354 |
PHPT60603PY |
60 V, 3 A PNP high power bipolar transistor |
Nexperia |
355 |
PHPT60606NY |
60 V, 6 A NPN high power bipolar transistor |
Nexperia |
356 |
PHPT60606PY |
60 V, 6 A PNP high power bipolar transistor |
Nexperia |
357 |
PHPT60610NY |
60 V, 10 A NPN high power bipolar transistor |
Nexperia |
358 |
PHPT60610PY |
60 V, 10 A PNP high power bipolar transistor |
Nexperia |
359 |
PHPT61002NYC |
100V, 2 A NPN high power bipolar transistor |
Nexperia |
360 |
PHPT61002NYCLH |
100 V, 2 A NPN high power bipolar transistor |
Nexperia |
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