| No. |
Part Name |
Description |
Manufacturer |
| 361 |
PHPT61002PYC |
100 V, 2 A PNP high power bipolar transistor |
Nexperia |
| 362 |
PHPT61002PYCLH |
100 V, 2 A PNP high power bipolar transistor |
Nexperia |
| 363 |
PHPT61003NY |
100 V, 3 A NPN high power bipolar transistor |
Nexperia |
| 364 |
PHPT61003PY |
100 V, 3A PNP high power bipolar transistor |
Nexperia |
| 365 |
PHPT61006NY |
100 V, 6 A NPN high power bipolar transistor |
Nexperia |
| 366 |
PHPT61006PY |
100 V, 6 A PNP high power bipolar transistor |
Nexperia |
| 367 |
PHPT61010NY |
100 V, 10 A NPN high power bipolar transistor |
Nexperia |
| 368 |
PHPT61010PY |
100 V, 10 A PNP high power bipolar transistor |
Nexperia |
| 369 |
QST6 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 370 |
QST7 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 371 |
QSX1 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 372 |
QSX5 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 373 |
QSX6 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 374 |
RM100CA/C1A-XXF |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 375 |
RM200DA-20F |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 376 |
RM200DA-24F |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 377 |
RM20DA/CA/C1A-XXF |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 378 |
RM50DA/CA/C1A-XXF |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 379 |
S175-50 |
175 W, 50 V, 2-30 MHz, HF linear bipolar |
Acrian |
| 380 |
S175-50-2 |
175 W, 50 V, 2-30 MHz, HF linear bipolar |
Acrian |
| 381 |
S175-50-3 |
175 W, 50 V, 2-30 MHz, HF linear bipolar |
Acrian |
| 382 |
SA10(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 383 |
SA100 |
100.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 384 |
SA100(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 385 |
SA100A |
100.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 386 |
SA11(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 387 |
SA110 |
110.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 388 |
SA110(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 389 |
SA110A |
110.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 390 |
SA12(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| | | |
