| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2SA1735 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 272 |
2SA1736 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 273 |
2SA1761 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 274 |
2SA1891 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 275 |
2SA1892 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 276 |
2SA1926 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 277 |
2SB1020A |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS |
TOSHIBA |
| 278 |
2SB1072(L) |
Bipolar power switching Darlington transistor |
Hitachi Semiconductor |
| 279 |
2SB1072(S) |
Bipolar power switching Darlington transistor |
Hitachi Semiconductor |
| 280 |
2SB1155 |
Silicon PNP epitaxial planar type(For power switching) |
Panasonic |
| 281 |
2SB1381 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS |
TOSHIBA |
| 282 |
2SB1457 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON) MICRO MOTOR DRIVE, HAMMER DRIVE, POWER SWITCHING AND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 283 |
2SB149 |
Low-Speed, High Power Switching Transistor |
TOSHIBA |
| 284 |
2SB1495 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 285 |
2SB1498 |
For power switching |
Panasonic |
| 286 |
2SB1606 |
Silicon PNP epitaxial planar type(For power switching) |
Panasonic |
| 287 |
2SB1607 |
Silicon PNP epitaxial planar type(For power switching) |
Panasonic |
| 288 |
2SB1617 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON) MICRO MOTOR DRIVE, HAMMER DRIVE, POWER SWITCHING AND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 289 |
2SB1641 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. |
TOSHIBA |
| 290 |
2SB1653 |
Silicon PNP triple diffusion planar type(For power switching) |
Panasonic |
| 291 |
2SB231 |
High Power Switching Transistor |
TOSHIBA |
| 292 |
2SB235 |
Low-Speed, High Power Switching Transistor |
TOSHIBA |
| 293 |
2SB236 |
Low-Speed, High Power Switching Transistor |
TOSHIBA |
| 294 |
2SB237 |
Low-Speed, High Power Switching Transistor |
TOSHIBA |
| 295 |
2SB296 |
High Power Switching Transistor |
TOSHIBA |
| 296 |
2SB331H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 297 |
2SB332H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 298 |
2SB333H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 299 |
2SB334H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 300 |
2SB339H |
Germanium PNP Alloyed Junction Transistor, intended for use in High Power Switching, DC-DC Converter, DC-AC Inverter, Audio Frequency Power Output |
Hitachi Semiconductor |
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