| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2SC2873 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 332 |
2SC2928 |
HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING |
Hitachi Semiconductor |
| 333 |
2SC3025 |
HIGH VOLTAGE POWER SWITCHING CHARACTER DISPLAY HORIZONTAL DEFLECTION OUTPUT |
Hitachi Semiconductor |
| 334 |
2SC3026 |
HIGH VOLTAGE POWER SWITCHING CHARACTER DISPLAY HORIZONTAL DEFLECTION OUTPUT |
Hitachi Semiconductor |
| 335 |
2SC3076 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 336 |
2SC3087 |
NPN Bipolar Transistor for Switching Regulator Applications |
ON Semiconductor |
| 337 |
2SC3090 |
NPN Triple Diffused Planar Silicon Transistor For Switching Regulators |
SANYO |
| 338 |
2SC3171 |
Si NPN triple diffused planar switching. |
Panasonic |
| 339 |
2SC3265 |
Transistor Silicon NPN Epitaxial Type (PCT process) Low Frequency Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 340 |
2SC3266 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 341 |
2SC3267 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 342 |
2SC3328 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 343 |
2SC3396 |
SILICON PNP/NPN EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING APPLICATIONS |
SANYO |
| 344 |
2SC3447 |
For Switching Regulators |
SANYO |
| 345 |
2SC3466 |
NPN Triple Diffused Planar Type Silicon Transistor Switching Regulator Applications |
SANYO |
| 346 |
2SC3497 |
6A; 30W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 347 |
2SC3559 |
3A; 30W; V(ceo): 800V; NPN transistor. For switching regulation |
TOSHIBA |
| 348 |
2SC3560 |
2A; 20W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 349 |
2SC3561 |
2A; 20W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 350 |
2SC3562 |
10A; 40W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 351 |
2SC3563 |
10A; 40W; V(ceo): 450V; NPN transistor. For switching regulation |
TOSHIBA |
| 352 |
2SC3625 |
8A; 40W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 353 |
2SC3658 |
HIGH VOLTAGE,HIGH POWER SWITCHING |
Hitachi Semiconductor |
| 354 |
2SC3659 |
HIGH VOLTAGE,HIGH POWER SWITCHING |
Hitachi Semiconductor |
| 355 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 356 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 357 |
2SC3669 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 358 |
2SC4110 |
NPN Bipolar Transistor for Switching Regulator Applications |
ON Semiconductor |
| 359 |
2SC4161 |
NPN Triple Diffused Planar Type Silicon Transistor SWITCHING REGULATOR APPLICATIONS |
SANYO |
| 360 |
2SC4162 |
NPN Triple Diffused Planar Type Silicon Transistor Switching Regulator Applications |
SANYO |
| | | |
