| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2SB340H |
Germanium PNP Alloyed Junction Transistor, intended for use in High Power Switching, DC-DC Converter, DC-AC Inverter, Audio Frequency Power Output |
Hitachi Semiconductor |
| 302 |
2SB341H |
Germanium PNP Alloyed Junction Transistor, intended for use in High Power Switching, DC-DC Converter, DC-AC Inverter, Audio Frequency Power Output |
Hitachi Semiconductor |
| 303 |
2SB367H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
| 304 |
2SB368H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
| 305 |
2SB673 |
Silicon PNP epitaxial darlington power switching transistor |
TOSHIBA |
| 306 |
2SB674 |
Silicon PNP epitaxial darlington power switching transistor |
TOSHIBA |
| 307 |
2SB675 |
Silicon PNP epitaxial darlington power switching transistor |
TOSHIBA |
| 308 |
2SB676 |
Silicon PNP epitaxial darlington power switching transistor |
TOSHIBA |
| 309 |
2SB677 |
Silicon PNP epitaxial darlington power switching transistor |
TOSHIBA |
| 310 |
2SB765 |
MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K |
Hitachi Semiconductor |
| 311 |
2SB765K |
MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K |
Hitachi Semiconductor |
| 312 |
2SB816 |
PNP Epitaxial Planar Silicon Transistors For LF Power Amplifier, 50W Output Large Power Switching Applications |
SANYO |
| 313 |
2SB943 |
Silicon PNP epitaxial planar type(For power switching) |
Panasonic |
| 314 |
2SB997 |
Silicon PNP triple diffused darlington power switching transistor |
TOSHIBA |
| 315 |
2SB998 |
Silicon PNP triple diffused darlington power switching transistor |
TOSHIBA |
| 316 |
2SB999 |
Silicon PNP triple diffused darlington power switching transistor |
TOSHIBA |
| 317 |
2SC101 |
High Power Switching Transistor |
TOSHIBA |
| 318 |
2SC102 |
High Power Switching Transistor |
TOSHIBA |
| 319 |
2SC1055H |
Transistor Silicon NPN Triple Diffused, intended for use in Power Switching Regulator |
Hitachi Semiconductor |
| 320 |
2SC161 |
High Power Switching Transistor |
TOSHIBA |
| 321 |
2SC1942 |
HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT |
Hitachi Semiconductor |
| 322 |
2SC21 |
High Power Switching Transistor |
TOSHIBA |
| 323 |
2SC2204 |
Silicon NPN triple diffused MESA high power switching transistor |
TOSHIBA |
| 324 |
2SC2220 |
Silicon NPN triple diffused MESA high power switching transistor |
TOSHIBA |
| 325 |
2SC2414 |
Si NPN triple diffused mesa . High speed power switching. |
Panasonic |
| 326 |
2SC2444 |
Silicon NPN triple diffused high power switching transistor |
TOSHIBA |
| 327 |
2SC2614 |
HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING |
Unknow |
| 328 |
2SC2616 |
HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING |
Unknow |
| 329 |
2SC2655 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 330 |
2SC2841 |
Si NPN triple diffused mesa. High speed power switching. |
Panasonic |
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