| No. |
Part Name |
Description |
Manufacturer |
| 271 |
IRF8910GPBF |
Halogen Free and Lead Free 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 272 |
IRF8910PBF-1 |
20V Dual N Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 273 |
IRF8910TR |
Leaded 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 274 |
IRF8910TRPBF |
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 275 |
IRF8910TRPBF-1 |
20V Dual N Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 276 |
IRF8915 |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 277 |
IRF8915PBF |
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 278 |
IRF8915TR |
Leaded 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 279 |
IRF8915TRPBF |
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 280 |
K6T4016U3C-RF85 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
| 281 |
K6T4016V3C-RF85 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
| 282 |
MBRF8100CT |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
| 283 |
MBRF8150CT |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
| 284 |
MBRF835CT |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
| 285 |
MBRF845CT |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
| 286 |
MBRF850CT |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
| 287 |
MBRF860CT |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
| 288 |
MBRF890CT |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
| 289 |
MRF8003 |
NPN silicon High Frequency transistor 0.5W 27MHz |
Motorola |
| 290 |
MRF8004 |
3.5W - 27MHz RF Power Transistor NPN Silicon |
Motorola |
| 291 |
MRF816 |
0.75W - 900MHz RF Power Transistor NPN Silicon |
Motorola |
| 292 |
MRF817 |
2.5W - 900MHz RF Power Transistor NPN Silicon designed for 13.6V |
Motorola |
| 293 |
MRF818 |
8W - 900MHz RF Power Transistor NPN Silicon |
Motorola |
| 294 |
MRF837 |
NPN SILICON RF LOW POWER TRANSISTOR |
Advanced Semiconductor |
| 295 |
MRF837 |
General Purpose Power |
Microsemi |
| 296 |
MRF837 |
NPN Silicon RF Low Power Transistor 750mW 870MHz |
Motorola |
| 297 |
MRF8372 |
General Purpose Power |
Microsemi |
| 298 |
MRF8372 |
NPN Silicon RF Low Power Transistor 750mW 870MHz |
Motorola |
| 299 |
MRF8372 |
RF LOW POWER TRANSISTOR NPN SILICON |
Motorola |
| 300 |
MRF8372R1 |
RF LOW POWER TRANSISTOR NPN SILICON |
Motorola |
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