| No. |
Part Name |
Description |
Manufacturer |
| 181 |
IRF831 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 4.5A |
Siliconix |
| 182 |
IRF8313 |
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 183 |
IRF8313PBF |
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 184 |
IRF8313TRPBF |
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 185 |
IRF832 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 186 |
IRF832 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 187 |
IRF832 |
Trans MOSFET N-CH 500V 4A |
New Jersey Semiconductor |
| 188 |
IRF832 |
N-Channel Power MOSFET |
Samsung Electronic |
| 189 |
IRF832 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.0A |
Siliconix |
| 190 |
IRF8327S |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance. |
International Rectifier |
| 191 |
IRF8327STR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance. |
International Rectifier |
| 192 |
IRF833 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 193 |
IRF833 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 194 |
IRF833 |
Trans MOSFET N-CH 450V 4A |
New Jersey Semiconductor |
| 195 |
IRF833 |
N-Channel Power MOSFET |
Samsung Electronic |
| 196 |
IRF833 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 4.0A |
Siliconix |
| 197 |
IRF840 |
8A, 500V, 0.850 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 198 |
IRF840 |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 199 |
IRF840 |
8A/ 500V/ 0.850 Ohm/ N-Channel Power MOSFET |
Intersil |
| 200 |
IRF840 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 201 |
IRF840 |
Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 202 |
IRF840 |
PowerMOS transistor Avalanche energy rated |
Philips |
| 203 |
IRF840 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 204 |
IRF840 |
N - CHANNEL 500V - 0.75Ohm - 8A - TO-220 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 205 |
IRF840 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 8A |
Siliconix |
| 206 |
IRF840 |
N-CHANNEL 500V - 0.75 OHM - 8A - TO-220 POWERMESH MOSFET |
ST Microelectronics |
| 207 |
IRF8401111 |
TRANSISTORS N-CHANNEL |
International Rectifier |
| 208 |
IRF840A |
N-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
| 209 |
IRF840A |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 210 |
IRF840AL |
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| | | |
