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Datasheets for RF8

Datasheets found :: 403
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 IRF822 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
122 IRF822 N-CHANNEL POWER MOSFETS Samsung Electronic
123 IRF822 N-channel enhancement mode power MOS transistor, 500V, 2.8A SGS Thomson Microelectronics
124 IRF822 MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.0A Siliconix
125 IRF822FI N-channel enhancement mode power MOS transistor, 500V, 1.9A SGS Thomson Microelectronics
126 IRF822FI N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS ST Microelectronics
127 IRF823 N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V Fairchild Semiconductor
128 IRF823 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
129 IRF823 N-CHANNEL Enhancement-Mode Silicon Gate TMOS Motorola
130 IRF823 N-CHANNEL POWER MOSFETS Samsung Electronic
131 IRF823 N-channel MOSFET, 450V, 2.2A SGS Thomson Microelectronics
132 IRF823 MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.0A Siliconix
133 IRF823FI N-channel MOSFET, 450V, 1.5A SGS Thomson Microelectronics
134 IRF8252 25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters International Rectifier
135 IRF8252PBF-1 25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package International Rectifier
136 IRF8252TRPBF 25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters International Rectifier
137 IRF8252TRPBF-1 25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package International Rectifier
138 IRF82FI N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS ST Microelectronics
139 IRF830 POWER MOSFET BayLinear
140 IRF830 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET Fairchild Semiconductor
141 IRF830 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
142 IRF830 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
143 IRF830 4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET Intersil
144 IRF830 Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
145 IRF830 Power Field Effect Transistor ON Semiconductor
146 IRF830 PowerMOS transistor Avalanche energy rated Philips
147 IRF830 N-Channel Power MOSFET Samsung Electronic
148 IRF830 N - CHANNEL 500V - 1.35W - 4.5A - TO-220 PowerMESH MOSFET SGS Thomson Microelectronics
149 IRF830 MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A Siliconix
150 IRF830 N-CHANNEL 500V - 1.35 OHM - 4.5A - TO-220 POWERMESH MOSFET ST Microelectronics


Datasheets found :: 403
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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