| No. |
Part Name |
Description |
Manufacturer |
| 151 |
IRF830 |
500 V,power field effect transistor |
TRANSYS Electronics Limited |
| 152 |
IRF830 |
N-CHANNEL ENHANCEMENT MODE |
TRSYS |
| 153 |
IRF830-D |
Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS |
ON Semiconductor |
| 154 |
IRF8301M |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance. |
International Rectifier |
| 155 |
IRF8301MTRPBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance. |
International Rectifier |
| 156 |
IRF8302M |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance. |
International Rectifier |
| 157 |
IRF8302MTR1PBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance. |
International Rectifier |
| 158 |
IRF8304M |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. |
International Rectifier |
| 159 |
IRF8304MTR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. |
International Rectifier |
| 160 |
IRF8306M |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. |
International Rectifier |
| 161 |
IRF8306MTR1PBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. |
International Rectifier |
| 162 |
IRF8308M |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance. |
International Rectifier |
| 163 |
IRF8308MTR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance. |
International Rectifier |
| 164 |
IRF830A |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 165 |
IRF830AL |
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 166 |
IRF830APBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 167 |
IRF830AS |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 168 |
IRF830AS |
Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
| 169 |
IRF830B |
500V N-Channel MOSFET |
Fairchild Semiconductor |
| 170 |
IRF830FI |
Trans MOSFET 500V 3A 3-Pin(3+Tab) ISOWATT220 |
New Jersey Semiconductor |
| 171 |
IRF830L |
HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A |
International Rectifier |
| 172 |
IRF830PBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 173 |
IRF830R |
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-262 |
New Jersey Semiconductor |
| 174 |
IRF830S |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 175 |
IRF830STRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 176 |
IRF830STRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 177 |
IRF831 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 178 |
IRF831 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 179 |
IRF831 |
Trans MOSFET N-CH 450V 4.5A |
New Jersey Semiconductor |
| 180 |
IRF831 |
N-Channel Power MOSFET |
Samsung Electronic |
| | | |
