No. |
Part Name |
Description |
Manufacturer |
151 |
IRF8302MTR1PBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance. |
International Rectifier |
152 |
IRF8304M |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. |
International Rectifier |
153 |
IRF8304MTR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. |
International Rectifier |
154 |
IRF8306M |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. |
International Rectifier |
155 |
IRF8306MTR1PBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. |
International Rectifier |
156 |
IRF8308M |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance. |
International Rectifier |
157 |
IRF8308MTR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance. |
International Rectifier |
158 |
IRF830A |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
159 |
IRF830AL |
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
160 |
IRF830APBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
161 |
IRF830AS |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
162 |
IRF830AS |
Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
163 |
IRF830B |
500V N-Channel MOSFET |
Fairchild Semiconductor |
164 |
IRF830FI |
Trans MOSFET 500V 3A 3-Pin(3+Tab) ISOWATT220 |
New Jersey Semiconductor |
165 |
IRF830L |
HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A |
International Rectifier |
166 |
IRF830PBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
167 |
IRF830R |
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-262 |
New Jersey Semiconductor |
168 |
IRF830S |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
169 |
IRF830STRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
170 |
IRF830STRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
171 |
IRF831 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
172 |
IRF831 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
173 |
IRF831 |
Trans MOSFET N-CH 450V 4.5A |
New Jersey Semiconductor |
174 |
IRF8313 |
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
175 |
IRF8313PBF |
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
176 |
IRF8313TRPBF |
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
177 |
IRF832 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
178 |
IRF832 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
179 |
IRF832 |
Trans MOSFET N-CH 500V 4A |
New Jersey Semiconductor |
180 |
IRF8327S |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance. |
International Rectifier |
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