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Datasheets for RF8

Datasheets found :: 374
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 IRF820 POWER MOSFET BayLinear
92 IRF820 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET Fairchild Semiconductor
93 IRF820 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
94 IRF820 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
95 IRF820 2.5A/ 500V/ 3.000 Ohm/ N-Channel Power MOSFET Intersil
96 IRF820 N-CHANNEL Enhancement-Mode Silicon Gate TMOS Motorola
97 IRF820 N-CHANNEL POWER MOSFETS Samsung Electronic
98 IRF820 N - CHANNEL 500V - 2.5 W - 2.5 A - TO-220 PowerMESH MOSFET SGS Thomson Microelectronics
99 IRF820 N-CHANNEL 500V - 2.5 OHM - 4A - TO-220 POWERMESH II MOSFET ST Microelectronics
100 IRF820A 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
101 IRF820AL 500V Single N-Channel HEXFET Power MOSFET in a TO-262 package International Rectifier
102 IRF820APBF 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
103 IRF820AS 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
104 IRF820ASTRL 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
105 IRF820ASTRR 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
106 IRF820B 500V N-Channel MOSFET Fairchild Semiconductor
107 IRF820FI N-channel enhancement mode power MOS transistor, 500V, 2.2A SGS Thomson Microelectronics
108 IRF820PBF 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
109 IRF820S 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
110 IRF820STRL 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
111 IRF820STRR 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
112 IRF821 N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V Fairchild Semiconductor
113 IRF821 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
114 IRF821 N-CHANNEL Enhancement-Mode Silicon Gate TMOS Motorola
115 IRF821 N-CHANNEL POWER MOSFETS Samsung Electronic
116 IRF821 N-channel MOSFET, 450V, 2.5A SGS Thomson Microelectronics
117 IRF821FI N-channel MOSFET, 450V, 2.0A SGS Thomson Microelectronics
118 IRF822 N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V Fairchild Semiconductor
119 IRF822 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
120 IRF822 N-CHANNEL POWER MOSFETS Samsung Electronic


Datasheets found :: 374
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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