| No. |
Part Name |
Description |
Manufacturer |
| 2761 |
2N4265 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
| 2762 |
2N4392CSM |
SMALL SIGNAL N.CHANNEL J.FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2763 |
2N4393CSM |
SMALL SIGNAL N.CHANNEL J.FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2764 |
2N4398 |
High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices |
Motorola |
| 2765 |
2N4399 |
High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices |
Motorola |
| 2766 |
2N4409 |
NPN silicon epitaxial transistor, designed for driving neon display tubes |
Motorola |
| 2767 |
2N4410 |
NPN silicon epitaxial transistor, designed for driving neon display tubes |
Motorola |
| 2768 |
2N4416 |
Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
| 2769 |
2N4427 |
Silicon NPN epitaxial planar transistor for input stages and driver stages in VHF amplifier circuits |
AEG-TELEFUNKEN |
| 2770 |
2N4427 |
Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications |
SGS-ATES |
| 2771 |
2N4427 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 2772 |
2N4427 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz and 470 MHz transmitters at 12 V supply voltage |
VALVO |
| 2773 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
| 2774 |
2N4429 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 2775 |
2N4430 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 2776 |
2N4431 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 2777 |
2N4441 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 2778 |
2N4442 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 2779 |
2N4443 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 2780 |
2N4444 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 2781 |
2N456A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
| 2782 |
2N457A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
| 2783 |
2N458A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
| 2784 |
2N460 |
PNP germanium transistor for general purpose industrial applications |
Motorola |
| 2785 |
2N461 |
PNP germanium transistor for general purpose industrial applications |
Motorola |
| 2786 |
2N464 |
PNP germanium transistor for applications in the audio-frequency range |
Motorola |
| 2787 |
2N465 |
PNP germanium transistor for applications in the audio-frequency range |
Motorola |
| 2788 |
2N466 |
PNP germanium transistor for applications in the audio-frequency range |
Motorola |
| 2789 |
2N467 |
PNP germanium transistor for applications in the audio-frequency range |
Motorola |
| 2790 |
2N4895 |
Planar transistor for switching applications |
SGS-ATES |
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