| No. |
Part Name |
Description |
Manufacturer |
| 2851 |
2N555 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 2852 |
2N5550 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 2853 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 2854 |
2N5589 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2855 |
2N5590 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2856 |
2N5591 |
NPN silicon RF power transistor designed for VHF and 13.6V |
Motorola |
| 2857 |
2N5591 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2858 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2859 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2860 |
2N5644 |
NPN silicon RF UHF power transistor, 1W Output power, designed for 12.5V |
Motorola |
| 2861 |
2N5664SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS |
SemeLAB |
| 2862 |
2N5829 |
RF PNP transistor for UHF low noise amplifier |
IPRS Baneasa |
| 2863 |
2N5835 |
RF NPN transistor for UHF amplifier |
IPRS Baneasa |
| 2864 |
2N5836 |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 2865 |
2N5837 |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 2866 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2867 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2868 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2869 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2870 |
2N5913 |
Silicon NPN Overalay RF Transistor, 12.5 Volt, for class-C VHF/UHF amplifiers |
RCA Solid State |
| 2871 |
2N5944 |
450-512MHz CLASS C 12.5V NPN transistor for mobile applications |
SGS Thomson Microelectronics |
| 2872 |
2N5945 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 2873 |
2N5945 |
450-512MHz CLASS C 12.5V 4W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
| 2874 |
2N5946 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 2875 |
2N5946 |
450-512MHz CLASS C 12.5V 10W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
| 2876 |
2N5995 |
7W, (CW) 175-MHz Silicon NPN Overlay RF Transistor for 12.5 Volt applications in VHF |
RCA Solid State |
| 2877 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2878 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2879 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2880 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
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