| No. |
Part Name |
Description |
Manufacturer |
| 2821 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
| 2822 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2823 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2824 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2825 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2826 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2827 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2828 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 2829 |
2N5324 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 2830 |
2N5325 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 2831 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 2832 |
2N5336 |
Planar transistor for switching applications |
SGS-ATES |
| 2833 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 2834 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 2835 |
2N5338 |
Planar transistor for switching applications |
SGS-ATES |
| 2836 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 2837 |
2N5339 |
Planar transistor for switching applications |
SGS-ATES |
| 2838 |
2N5400 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 2839 |
2N5401 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 2840 |
2N5415CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2841 |
2N5416CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 2842 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
| 2843 |
2N5447 |
Silicon PNP epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
| 2844 |
2N5448 |
Silicon PNP epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
| 2845 |
2N5449 |
Silicon NPN epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
| 2846 |
2N5450 |
Silicon NPN epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
| 2847 |
2N5484 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 2848 |
2N5485 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 2849 |
2N5486 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 2850 |
2N554 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
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