DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for ENHANCEMENT

Datasheets found :: 6594
Page: | 95 | 96 | 97 | 98 | 99 | 100 | 101 | 102 | 103 |
No. Part Name Description Manufacturer
2941 IRF323 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
2942 IRF330 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
2943 IRF330 MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A Siliconix
2944 IRF331 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
2945 IRF331 MOSPOWER N-Channel Enhancement Mode Transistor 350V 5.5A Siliconix
2946 IRF332 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
2947 IRF332 MOSPOWER N-Channel Enhancement Mode Transistor 400V 4.5A Siliconix
2948 IRF333 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
2949 IRF333 MOSPOWER N-Channel Enhancement Mode Transistor 350V 4.5A Siliconix
2950 IRF340 MOSPOWER N-Channel Enhancement Mode Transistor 400V 10A Siliconix
2951 IRF341 MOSPOWER N-Channel Enhancement Mode Transistor 350V 10A Siliconix
2952 IRF342 MOSPOWER N-Channel Enhancement Mode Transistor 400V 8A Siliconix
2953 IRF343 MOSPOWER N-Channel Enhancement Mode Transistor 350V 8A Siliconix
2954 IRF350 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 15A. General Electric Solid State
2955 IRF350 MOSPOWER N-Channel Enhancement Mode Transistor 400V 15A Siliconix
2956 IRF351 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 15A. General Electric Solid State
2957 IRF351 MOSPOWER N-Channel Enhancement Mode Transistor 350V 15A Siliconix
2958 IRF352 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
2959 IRF352 MOSPOWER N-Channel Enhancement Mode Transistor 400V 13A Siliconix
2960 IRF353 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
2961 IRF353 MOSPOWER N-Channel Enhancement Mode Transistor 350V 13A Siliconix
2962 IRF420 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
2963 IRF421 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
2964 IRF422 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
2965 IRF423 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
2966 IRF430 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
2967 IRF430 MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A Siliconix
2968 IRF431 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
2969 IRF431 MOSPOWER N-Channel Enhancement Mode Transistor 450V 4.5A Siliconix
2970 IRF432 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State


Datasheets found :: 6594
Page: | 95 | 96 | 97 | 98 | 99 | 100 | 101 | 102 | 103 |



© 2024 - www Datasheet Catalog com