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Datasheets for ENHANCEMENT

Datasheets found :: 6594
Page: | 98 | 99 | 100 | 101 | 102 | 103 | 104 | 105 | 106 |
No. Part Name Description Manufacturer
3031 IRF532 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
3032 IRF532 MOSPOWER N-Channel Enhancement Mode Transistor 100V 12A Siliconix
3033 IRF532FI N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ST Microelectronics
3034 IRF532FI N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ST Microelectronics
3035 IRF533 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
3036 IRF533 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
3037 IRF533 MOSPOWER N-Channel Enhancement Mode Transistor 60V 12A Siliconix
3038 IRF533FI N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ST Microelectronics
3039 IRF540 MOSPOWER N-Channel Enhancement Mode Transistor 100V 27A Siliconix
3040 IRF540-D TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate ON Semiconductor
3041 IRF541 MOSPOWER N-Channel Enhancement Mode Transistor 60V 27A Siliconix
3042 IRF542 MOSPOWER N-Channel Enhancement Mode Transistor 100V 24A Siliconix
3043 IRF543 MOSPOWER N-Channel Enhancement Mode Transistor 60V 24A Siliconix
3044 IRF610 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
3045 IRF610 MOSPOWER N-Channel Enhancement Mode Transistor 200V 2.5A Siliconix
3046 IRF611 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
3047 IRF611 MOSPOWER N-Channel Enhancement Mode Transistor 150V 2.5A Siliconix
3048 IRF612 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
3049 IRF612 MOSPOWER N-Channel Enhancement Mode Transistor 200V 2A Siliconix
3050 IRF613 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
3051 IRF613 MOSPOWER N-Channel Enhancement Mode Transistor 150V 2A Siliconix
3052 IRF620 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
3053 IRF620 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
3054 IRF620 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
3055 IRF620 MOSPOWER N-Channel Enhancement Mode Transistor 200V 5A Siliconix
3056 IRF620FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
3057 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
3058 IRF621 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
3059 IRF621 MOSPOWER N-Channel Enhancement Mode Transistor 150V 5A Siliconix
3060 IRF622 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State


Datasheets found :: 6594
Page: | 98 | 99 | 100 | 101 | 102 | 103 | 104 | 105 | 106 |



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