| No. |
Part Name |
Description |
Manufacturer |
| 2971 |
IRF432 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4A |
Siliconix |
| 2972 |
IRF433 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 2973 |
IRF433 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 4A |
Siliconix |
| 2974 |
IRF440 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 8A |
Siliconix |
| 2975 |
IRF441 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 8A |
Siliconix |
| 2976 |
IRF442 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 7A |
Siliconix |
| 2977 |
IRF443 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 7A |
Siliconix |
| 2978 |
IRF450 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 2979 |
IRF450 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 13A |
Siliconix |
| 2980 |
IRF451 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 2981 |
IRF451 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 13A |
Siliconix |
| 2982 |
IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 2983 |
IRF452 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 12A |
Siliconix |
| 2984 |
IRF453 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 2985 |
IRF453 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 12A |
Siliconix |
| 2986 |
IRF460 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
SemeLAB |
| 2987 |
IRF510 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 2988 |
IRF510 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 4A |
Siliconix |
| 2989 |
IRF510 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 2990 |
IRF511 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 2991 |
IRF511 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 4A |
Siliconix |
| 2992 |
IRF511 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 2993 |
IRF512 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 3.5A. |
General Electric Solid State |
| 2994 |
IRF512 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 3.5A |
Siliconix |
| 2995 |
IRF512 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 2996 |
IRF513 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 3.5A. |
General Electric Solid State |
| 2997 |
IRF513 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 3.5A |
Siliconix |
| 2998 |
IRF513 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 2999 |
IRF520 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 3000 |
IRF520 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
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