| No. |
Part Name |
Description |
Manufacturer |
| 3091 |
IRF730 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 3092 |
IRF730 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A |
Siliconix |
| 3093 |
IRF731 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 3094 |
IRF731 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 5.5A |
Siliconix |
| 3095 |
IRF732 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 3096 |
IRF732 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 4.5A |
Siliconix |
| 3097 |
IRF733 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 3098 |
IRF733 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 4.5A |
Siliconix |
| 3099 |
IRF740 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 10A |
Siliconix |
| 3100 |
IRF741 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 10A |
Siliconix |
| 3101 |
IRF742 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 8.0A |
Siliconix |
| 3102 |
IRF743 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 8.0A |
Siliconix |
| 3103 |
IRF82 |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| 3104 |
IRF820 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 3105 |
IRF820 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 3106 |
IRF820 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.5A |
Siliconix |
| 3107 |
IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A |
SGS Thomson Microelectronics |
| 3108 |
IRF821 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 3109 |
IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 3110 |
IRF821 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.5A |
Siliconix |
| 3111 |
IRF822 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 3112 |
IRF822 |
N-channel enhancement mode power MOS transistor, 500V, 2.8A |
SGS Thomson Microelectronics |
| 3113 |
IRF822 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.0A |
Siliconix |
| 3114 |
IRF822FI |
N-channel enhancement mode power MOS transistor, 500V, 1.9A |
SGS Thomson Microelectronics |
| 3115 |
IRF822FI |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| 3116 |
IRF823 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 3117 |
IRF823 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 3118 |
IRF823 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.0A |
Siliconix |
| 3119 |
IRF82FI |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| 3120 |
IRF830 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
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