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Datasheets for NCEM

Datasheets found :: 6692
Page: | 96 | 97 | 98 | 99 | 100 | 101 | 102 | 103 | 104 |
No. Part Name Description Manufacturer
2971 IRF153 MOSPOWER N-Channel Enhancement Mode Transistor 60V 33A Siliconix
2972 IRF220 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
2973 IRF221 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
2974 IRF222 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
2975 IRF223 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
2976 IRF230 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
2977 IRF230 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET SemeLAB
2978 IRF230 MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A Siliconix
2979 IRF231 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
2980 IRF231 MOSPOWER N-Channel Enhancement Mode Transistor 150V 9A Siliconix
2981 IRF232 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
2982 IRF232 MOSPOWER N-Channel Enhancement Mode Transistor 200V 8A Siliconix
2983 IRF233 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
2984 IRF233 MOSPOWER N-Channel Enhancement Mode Transistor 150V 8A Siliconix
2985 IRF240 MOSPOWER N-Channel Enhancement Mode Transistor 200V 18A Siliconix
2986 IRF241 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. General Electric Solid State
2987 IRF241 MOSPOWER N-Channel Enhancement Mode Transistor 150V 18A Siliconix
2988 IRF242 MOSPOWER N-Channel Enhancement Mode Transistor 200V 16A Siliconix
2989 IRF243 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. General Electric Solid State
2990 IRF243 MOSPOWER N-Channel Enhancement Mode Transistor 150V 16A Siliconix
2991 IRF250 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
2992 IRF250 MOSPOWER N-Channel Enhancement Mode Transistor 200V 30A Siliconix
2993 IRF251 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
2994 IRF251 MOSPOWER N-Channel Enhancement Mode Transistor 150V 30A Siliconix
2995 IRF252 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A. General Electric Solid State
2996 IRF252 MOSPOWER N-Channel Enhancement Mode Transistor 200V 25A Siliconix
2997 IRF253 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 25A. General Electric Solid State
2998 IRF253 MOSPOWER N-Channel Enhancement Mode Transistor 150V 25A Siliconix
2999 IRF320 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State
3000 IRF321 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State


Datasheets found :: 6692
Page: | 96 | 97 | 98 | 99 | 100 | 101 | 102 | 103 | 104 |



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