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Datasheets for NCEM

Datasheets found :: 6692
Page: | 98 | 99 | 100 | 101 | 102 | 103 | 104 | 105 | 106 |
No. Part Name Description Manufacturer
3031 IRF432 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
3032 IRF432 MOSPOWER N-Channel Enhancement Mode Transistor 500V 4A Siliconix
3033 IRF433 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
3034 IRF433 MOSPOWER N-Channel Enhancement Mode Transistor 450V 4A Siliconix
3035 IRF440 MOSPOWER N-Channel Enhancement Mode Transistor 500V 8A Siliconix
3036 IRF441 MOSPOWER N-Channel Enhancement Mode Transistor 450V 8A Siliconix
3037 IRF442 MOSPOWER N-Channel Enhancement Mode Transistor 500V 7A Siliconix
3038 IRF443 MOSPOWER N-Channel Enhancement Mode Transistor 450V 7A Siliconix
3039 IRF450 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
3040 IRF450 MOSPOWER N-Channel Enhancement Mode Transistor 500V 13A Siliconix
3041 IRF451 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
3042 IRF451 MOSPOWER N-Channel Enhancement Mode Transistor 450V 13A Siliconix
3043 IRF452 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
3044 IRF452 MOSPOWER N-Channel Enhancement Mode Transistor 500V 12A Siliconix
3045 IRF453 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
3046 IRF453 MOSPOWER N-Channel Enhancement Mode Transistor 450V 12A Siliconix
3047 IRF460 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS SemeLAB
3048 IRF510 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
3049 IRF510 MOSPOWER N-Channel Enhancement Mode Transistor 100V 4A Siliconix
3050 IRF510 N-Channel Enhancement-Mode Vertical DMOS Power FETs Supertex Inc
3051 IRF511 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
3052 IRF511 MOSPOWER N-Channel Enhancement Mode Transistor 60V 4A Siliconix
3053 IRF511 N-Channel Enhancement-Mode Vertical DMOS Power FETs Supertex Inc
3054 IRF512 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 3.5A. General Electric Solid State
3055 IRF512 MOSPOWER N-Channel Enhancement Mode Transistor 100V 3.5A Siliconix
3056 IRF512 N-Channel Enhancement-Mode Vertical DMOS Power FETs Supertex Inc
3057 IRF513 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 3.5A. General Electric Solid State
3058 IRF513 MOSPOWER N-Channel Enhancement Mode Transistor 60V 3.5A Siliconix
3059 IRF513 N-Channel Enhancement-Mode Vertical DMOS Power FETs Supertex Inc
3060 IRF520 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics


Datasheets found :: 6692
Page: | 98 | 99 | 100 | 101 | 102 | 103 | 104 | 105 | 106 |



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