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Datasheets for NCEM

Datasheets found :: 6692
Page: | 100 | 101 | 102 | 103 | 104 | 105 | 106 | 107 | 108 |
No. Part Name Description Manufacturer
3091 IRF532 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
3092 IRF532 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
3093 IRF532 MOSPOWER N-Channel Enhancement Mode Transistor 100V 12A Siliconix
3094 IRF532FI N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ST Microelectronics
3095 IRF532FI N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ST Microelectronics
3096 IRF533 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
3097 IRF533 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
3098 IRF533 MOSPOWER N-Channel Enhancement Mode Transistor 60V 12A Siliconix
3099 IRF533FI N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ST Microelectronics
3100 IRF540 MOSPOWER N-Channel Enhancement Mode Transistor 100V 27A Siliconix
3101 IRF540-D TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate ON Semiconductor
3102 IRF541 MOSPOWER N-Channel Enhancement Mode Transistor 60V 27A Siliconix
3103 IRF542 MOSPOWER N-Channel Enhancement Mode Transistor 100V 24A Siliconix
3104 IRF543 MOSPOWER N-Channel Enhancement Mode Transistor 60V 24A Siliconix
3105 IRF610 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
3106 IRF610 MOSPOWER N-Channel Enhancement Mode Transistor 200V 2.5A Siliconix
3107 IRF611 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
3108 IRF611 MOSPOWER N-Channel Enhancement Mode Transistor 150V 2.5A Siliconix
3109 IRF612 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
3110 IRF612 MOSPOWER N-Channel Enhancement Mode Transistor 200V 2A Siliconix
3111 IRF613 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
3112 IRF613 MOSPOWER N-Channel Enhancement Mode Transistor 150V 2A Siliconix
3113 IRF620 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
3114 IRF620 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
3115 IRF620 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
3116 IRF620 MOSPOWER N-Channel Enhancement Mode Transistor 200V 5A Siliconix
3117 IRF620FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
3118 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
3119 IRF621 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
3120 IRF621 MOSPOWER N-Channel Enhancement Mode Transistor 150V 5A Siliconix


Datasheets found :: 6692
Page: | 100 | 101 | 102 | 103 | 104 | 105 | 106 | 107 | 108 |



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