| No. |
Part Name |
Description |
Manufacturer |
| 3001 |
2SC2459 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications |
TOSHIBA |
| 3002 |
2SC2461A |
SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
TOSHIBA |
| 3003 |
2SC2464 |
SILICON NPN EPITAXIAL UHF AMPLIFIER |
Unknow |
| 3004 |
2SC2466 |
SILICON NPN EPITAXIAL UHF AMPLIFIER |
Unknow |
| 3005 |
2SC2468 |
SILICON NPN EPITAXIAL UHF AMPLIFIER |
Hitachi Semiconductor |
| 3006 |
2SC2469 |
SILICON NPN EPITAXIAL UHF AMPLIFIER |
Hitachi Semiconductor |
| 3007 |
2SC2472 |
SILICON NPN EPITAXIAL UHF AMPLIFIER |
Unknow |
| 3008 |
2SC2481 |
Silicon NPN epitaxial transistor, color TV vert. deflection, class B sound output applications |
TOSHIBA |
| 3009 |
2SC2483 |
Silicon NPN epitaxial high-voltage transistor, complementary to 2SA1195 |
TOSHIBA |
| 3010 |
2SC2484 |
Silicon NPN epitaxial base mesa transistor, 80V, 5A |
Panasonic |
| 3011 |
2SC2488 |
SI NPN EPITAXIAL MESA |
Panasonic |
| 3012 |
2SC2489 |
SI NPN EPITAXIAL MESA |
Panasonic |
| 3013 |
2SC2498 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
| 3014 |
2SC2499 |
Silicon NPN Epitaxial planar type transistor |
TOSHIBA |
| 3015 |
2SC2500 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3016 |
2SC2508 |
Silicon NPN epitaxial planar VHF band power transistor 27W |
TOSHIBA |
| 3017 |
2SC2509 |
Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications |
TOSHIBA |
| 3018 |
2SC2510 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) |
TOSHIBA |
| 3019 |
2SC2519 |
SILICON NPN EPITAXIAL PLANAR |
Panasonic |
| 3020 |
2SC2531 |
Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications 28V supply voltage use |
TOSHIBA |
| 3021 |
2SC2532 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications |
TOSHIBA |
| 3022 |
2SC2538 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 3023 |
2SC2539 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 3024 |
2SC2540 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 3025 |
2SC2550 |
Silicon NPN Epitaxial type transistor (PCT Process) for industrial applications |
TOSHIBA |
| 3026 |
2SC2551 |
Transistor Silicon NPN Epitaxial Type (PCT process) Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 3027 |
2SC2561 |
Si NPN epitaxial planar. RF amplifier. |
Panasonic |
| 3028 |
2SC2562 |
Silicon NPN epitaxial high-current switching transistor |
TOSHIBA |
| 3029 |
2SC2563 |
Silicon NPN epitaxial audio frequency power transistor |
TOSHIBA |
| 3030 |
2SC2564 |
Silicon NPN epitaxial power transistor, complementary to 2SA1094 |
TOSHIBA |
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