| No. |
Part Name |
Description |
Manufacturer |
| 3061 |
2SC2717 |
Transistor Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier Applications |
TOSHIBA |
| 3062 |
2SC2753 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
| 3063 |
2SC2754 |
Silicon NPN epitaxial type transistor (PCT Process) |
TOSHIBA |
| 3064 |
2SC2756 |
NPN silicon epitaxial transistor, VHF mixer |
NEC |
| 3065 |
2SC2756R |
NPN silicon epitaxial transistor, VHF mixer |
NEC |
| 3066 |
2SC2757 |
NPN silicon epitaxial transistor for UHF/VHF oscillator and VHF mixer |
NEC |
| 3067 |
2SC2757R |
NPN silicon epitaxial transistor for UHF/VHF oscillator and VHF mixer |
NEC |
| 3068 |
2SC2759R |
NPN silicon epitaxial transistor for UHF/VHF mixer, UHF oscillator |
NEC |
| 3069 |
2SC2776 |
Silicon NPN Epitaxial Planar |
Hitachi Semiconductor |
| 3070 |
2SC2780 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 3071 |
2SC2782 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3072 |
2SC2797 |
NPN epitaxial planar RF power UHF transistor 5W 24V |
Mitsubishi Electric Corporation |
| 3073 |
2SC2798 |
NPN epitaxial planar RF power UHF transistor 12W 24V |
Mitsubishi Electric Corporation |
| 3074 |
2SC2799 |
NPN epitaxial planar RF power UHF transistor 25W 24V |
Mitsubishi Electric Corporation |
| 3075 |
2SC2800 |
NPN SPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 3076 |
2SC2805 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
| 3077 |
2SC2806 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
| 3078 |
2SC280H |
Silicon NPN Epitaxial LTP Twin Transistor, intended for use in DC Amplifier |
Hitachi Semiconductor |
| 3079 |
2SC281 |
Silicon NPN Epitaxial LTP Transistor Vcbo=30V, Pc=200mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 3080 |
2SC2814 |
NPN Epitaxial Planar Silicon Transistor High-Friquency General-Purpose Amplifier Applications |
SANYO |
| 3081 |
2SC281H |
Silicon NPN Epitaxial LTP Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 3082 |
2SC2824 |
SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
TOSHIBA |
| 3083 |
2SC282H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
| 3084 |
2SC283 |
Silicon NPN Epitaxial LTP Transistor Vcbo=50V, Pc=350mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 3085 |
2SC2839 |
NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications |
SANYO |
| 3086 |
2SC283H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier |
Hitachi Semiconductor |
| 3087 |
2SC2840 |
NPN Epitaxial Planar Type Silicon Transistor |
SANYO |
| 3088 |
2SC2845 |
SILICON NPN EPITAXIAL PLANAR |
Panasonic |
| 3089 |
2SC284H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
| 3090 |
2SC2859 |
Transistor Silicon NPN Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
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