No. |
Part Name |
Description |
Manufacturer |
3091 |
2SC2860 |
Si NPN Epitaxial Planar |
Panasonic |
3092 |
2SC2868 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
3093 |
2SC2873 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
3094 |
2SC2876 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
3095 |
2SC2877 |
Silicon NPN epitaxial planar audio frequency power transistor |
TOSHIBA |
3096 |
2SC2878 |
Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications |
TOSHIBA |
3097 |
2SC2879 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
3098 |
2SC2881 |
Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications |
TOSHIBA |
3099 |
2SC2882 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
3100 |
2SC2883 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
3101 |
2SC2884 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
3102 |
2SC288A(I*B) |
2SC288A(I·B) NPN silicon epitaxial transistor DISK MOLD for UHF oscillator |
NEC |
3103 |
2SC2904 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
3104 |
2SC2905 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
3105 |
2SC2909 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching AF 60W Predriver Applications |
SANYO |
3106 |
2SC2910 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Audio 80W Output Predriver Applications |
SANYO |
3107 |
2SC2911 |
NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications |
SANYO |
3108 |
2SC2922 |
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION) |
Wing Shing Computer Components |
3109 |
2SC2932 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
3110 |
2SC2933 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
3111 |
2SC2946 |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
3112 |
2SC29461 |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
3113 |
2SC2954 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
3114 |
2SC2960 |
NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications |
SANYO |
3115 |
2SC2982 |
Transistor Silicon NPN Epitaxial Type (PCT process) Storobo Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
3116 |
2SC2983 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
3117 |
2SC2986 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
3118 |
2SC2995 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, OSC, IF High Frequency Amplifier Applications |
TOSHIBA |
3119 |
2SC2996 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, Local, IF High Frequency Amplifier Applications |
TOSHIBA |
3120 |
2SC2999 |
NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications |
SANYO |
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