No. |
Part Name |
Description |
Manufacturer |
301 |
2N696 |
Silicon n-p-n medium power transistor |
Mullard |
302 |
2N697 |
Silicon n-p-n medium power transistor |
Mullard |
303 |
2N7000 |
Medium Power MOSFETS |
Micro Commercial Components |
304 |
2N731 |
NPN silicon transistor medium power, audio-frequency applications in industrial service |
Motorola |
305 |
2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
306 |
2SA1160 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
307 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
308 |
2SA1242 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
309 |
2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
310 |
2SA1430 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
311 |
2SA1431 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
312 |
2SA1515 |
Medium Power Transistor |
ROHM |
313 |
2SA1727 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
314 |
2SA1759 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
315 |
2SA1776 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
316 |
2SA1797 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
317 |
2SA1802 |
Transistor Silicon PNP Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
318 |
2SA1812 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
319 |
2SA1834 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
320 |
2SA1862 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
321 |
2SA1893 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
322 |
2SA1900 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
323 |
2SA1952 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
324 |
2SA1979 |
PNP Silicon Transistor (Medium power amplifier) |
AUK Corp |
325 |
2SA1979M |
PNP Silicon Transistor (Medium power amplifier) |
AUK Corp |
326 |
2SA1979S |
PNP Silicon Transistor (Medium power amplifier) |
AUK Corp |
327 |
2SA1979SF |
PNP Silicon Transistor (Medium power amplifier) |
AUK Corp |
328 |
2SA1979U |
PNP Silicon Transistor (Medium power amplifier) |
AUK Corp |
329 |
2SA1979UF |
PNP Silicon Transistor (Medium power amplifier) |
AUK Corp |
330 |
2SA2048 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
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