No. |
Part Name |
Description |
Manufacturer |
391 |
2N6717 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
392 |
2N6718 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
Diodes |
393 |
2N6718 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
394 |
2N6724 |
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS |
Diodes |
395 |
2N6725 |
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS |
Diodes |
396 |
2N6726 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Diodes |
397 |
2N6726 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
398 |
2N6727 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Diodes |
399 |
2N6727 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
400 |
2N6728 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Diodes |
401 |
2N6728 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
402 |
2N6729 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Diodes |
403 |
2N6729 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
404 |
2N6730 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Diodes |
405 |
2N6730 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
406 |
2N6731 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
Diodes |
407 |
2N6731 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
Zetex Semiconductors |
408 |
2N6732 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
Diodes |
409 |
2N6732 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
Zetex Semiconductors |
410 |
2N6740 |
100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. |
Continental Device India Limited |
411 |
2N696 |
Silicon n-p-n medium power transistor |
Mullard |
412 |
2N697 |
Silicon n-p-n medium power transistor |
Mullard |
413 |
2N699 |
Medium Power NPN Transistor |
National Semiconductor |
414 |
2N7000 |
Medium Power MOSFETS |
Micro Commercial Components |
415 |
2N731 |
NPN silicon transistor medium power, audio-frequency applications in industrial service |
Motorola |
416 |
2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
417 |
2SA1160 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
418 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
419 |
2SA1242 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
420 |
2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
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