| No. |
Part Name |
Description |
Manufacturer |
| 421 |
2N6728 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Diodes |
| 422 |
2N6728 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
| 423 |
2N6729 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Diodes |
| 424 |
2N6729 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
| 425 |
2N6730 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Diodes |
| 426 |
2N6730 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
| 427 |
2N6731 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
Diodes |
| 428 |
2N6731 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
Zetex Semiconductors |
| 429 |
2N6732 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
Diodes |
| 430 |
2N6732 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
Zetex Semiconductors |
| 431 |
2N6740 |
100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. |
Continental Device India Limited |
| 432 |
2N696 |
Silicon n-p-n medium power transistor |
Mullard |
| 433 |
2N697 |
Silicon n-p-n medium power transistor |
Mullard |
| 434 |
2N699 |
Medium Power NPN Transistor |
National Semiconductor |
| 435 |
2N7000 |
Medium Power MOSFETS |
Micro Commercial Components |
| 436 |
2N731 |
NPN silicon transistor medium power, audio-frequency applications in industrial service |
Motorola |
| 437 |
2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 438 |
2SA1160 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 439 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
| 440 |
2SA1242 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 441 |
2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 442 |
2SA1430 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 443 |
2SA1431 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 444 |
2SA1515 |
Medium Power Transistor |
ROHM |
| 445 |
2SA1727 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 446 |
2SA1759 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 447 |
2SA1776 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 448 |
2SA1797 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 449 |
2SA1802 |
Transistor Silicon PNP Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 450 |
2SA1812 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| | | |
