| No. |
Part Name |
Description |
Manufacturer |
| 3091 |
2N5400 |
High Voltage Transistor |
Korea Electronics (KEC) |
| 3092 |
2N5400 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
| 3093 |
2N5400 |
PNP silicon annular high voltge amplifier transistor |
Motorola |
| 3094 |
2N5400 |
Silicon PNP Transistor |
Motorola |
| 3095 |
2N5400 |
PNP Transistor - General purpose AMPS and switches |
National Semiconductor |
| 3096 |
2N5400 |
Trans GP BJT PNP 120V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 3097 |
2N5400 |
Amplifier Transistor(PNP Silicon) |
ON Semiconductor |
| 3098 |
2N5400 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 3099 |
2N5400 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 3100 |
2N5400 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 3101 |
2N5400 |
Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 3102 |
2N5400RA |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3103 |
2N5400RLRA |
Amplifier Transistor PNP |
ON Semiconductor |
| 3104 |
2N5400RLRP |
Amplifier Transistor PNP |
ON Semiconductor |
| 3105 |
2N5400S |
High Voltage Transistor |
Korea Electronics (KEC) |
| 3106 |
2N5400_D26Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3107 |
2N5400_D27Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3108 |
2N5400_D75Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3109 |
2N5400_D81Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3110 |
2N5432 |
Trans JFET N-CH 400mA 3-Pin TO-52 |
New Jersey Semiconductor |
| 3111 |
2N5433 |
Trans JFET N-CH 400mA 3-Pin TO-52 |
New Jersey Semiconductor |
| 3112 |
2N5442 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 3113 |
2N5445 |
TRIACs 40 Ampere RMS, 400V |
Motorola |
| 3114 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 3115 |
2N5582 |
Chip Type 2C2222A Geometry 0400 Polarity NPN |
Semicoa Semiconductor |
| 3116 |
2N5756 |
2.5-A silicon triac. Voltage(typ) 400 V. |
General Electric Solid State |
| 3117 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
| 3118 |
2N5919A |
16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor |
RCA Solid State |
| 3119 |
2N6073 |
Silicon Bidirectional Thyristor 4A 400V |
Motorola |
| 3120 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
| | | |
