| No. |
Part Name |
Description |
Manufacturer |
| 3211 |
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W. |
USHA India LTD |
| 3212 |
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W. |
USHA India LTD |
| 3213 |
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 3214 |
2SAR340P |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 3215 |
2SAR340PT100 |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 3216 |
2SAR340Q |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 3217 |
2SAR340QTR |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 3218 |
2SB1400 |
Silicon PNP Darlington Transistor |
Hitachi Semiconductor |
| 3219 |
2SB1400 |
Silicon PNP Epitaxial |
Hitachi Semiconductor |
| 3220 |
2SB1400 |
Transistors>Switching/Bipolar |
Renesas |
| 3221 |
2SB1400 |
Silicon PNP Power Transistors TO-220Fa package |
Savantic |
| 3222 |
2SC1120 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 3223 |
2SC1121 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 3224 |
2SC1122A |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio Output Stage applications (low supply voltage use) |
TOSHIBA |
| 3225 |
2SC1241 |
Silicon NPN epitaxial planar RF transistor, fT=400MHz |
TOSHIBA |
| 3226 |
2SC1358 |
POWER TRANSISTORS(4.5A,1400V,50W) |
MOSPEC Semiconductor |
| 3227 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
| 3228 |
2SC2331 |
Trans GP BJT NPN 400V 15A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 3229 |
2SC2333 |
Trans GP BJT NPN 400V 2A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 3230 |
2SC2335 |
Trans GP BJT NPN 400V 15A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 3231 |
2SC2356 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT |
Fujitsu Microelectronics |
| 3232 |
2SC2502 |
POWER TRANSISTORS(6.0A,400V,50W) |
MOSPEC Semiconductor |
| 3233 |
2SC2542 |
Trans GP BJT NPN 400V 5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 3234 |
2SC2555 |
POWER TRANSISTORS(8.0A,400V,80W) |
MOSPEC Semiconductor |
| 3235 |
2SC2625 |
POWER TRANSISTORS(10A,400V,80W) |
MOSPEC Semiconductor |
| 3236 |
2SC2625 |
Trans GP BJT NPN 400V 10A 3-Pin(3+Tab) TO-3P |
New Jersey Semiconductor |
| 3237 |
2SC2826 |
POWER TRANSISTORS(3.0A,400V,40W) |
MOSPEC Semiconductor |
| 3238 |
2SC2914 |
Trans GP BJT NPN 400V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 3239 |
2SC2929 |
Trans GP BJT NPN 400V 3A 3-Pin(3+Tab) TO-220AB T/R |
New Jersey Semiconductor |
| 3240 |
2SC2938 |
POWER TRANSISTORS(10A,400V,100W) |
MOSPEC Semiconductor |
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