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Datasheets for 400

Datasheets found :: 38071
Page: | 103 | 104 | 105 | 106 | 107 | 108 | 109 | 110 | 111 |
No. Part Name Description Manufacturer
3181 2N6768 Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
3182 2N6768 MOSPOWER N-Channel Enhancement Mode Transistor 400V 14A Siliconix
3183 2N6786 400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package International Rectifier
3184 2N6786 Trans MOSFET N-CH 400V 1.25A 3-Pin TO-39 New Jersey Semiconductor
3185 2N6786 MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.25A Siliconix
3186 2N6792 400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package International Rectifier
3187 2N6792 MOSPOWER N-Channel Enhancement Mode Transistor 400V 2A Siliconix
3188 2N6800 400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package International Rectifier
3189 2N6800 MOSPOWER N-Channel Enhancement Mode Transistor 400V 3A Siliconix
3190 2N687 25A silicon controlled rectifier. Vrsom 400V. General Electric Solid State
3191 2N688 400V 16A Phase Control SCR in a TO-208AA (TO-48) package International Rectifier
3192 2N688 Thyristor SCR 400V 200A 3-Pin TO-48 Box New Jersey Semiconductor
3193 2N688A Thyristor SCR 400V 200A 3-Pin TO-48 Box New Jersey Semiconductor
3194 2N6964 MOSPOWER N-Channel Enhancement Mode Transistor 400V 15A Siliconix
3195 2N6975 5A/ 400V and 500V N-Channel IGBTs Intersil
3196 2N6976 5A/ 400V and 500V N-Channel IGBTs Intersil
3197 2N6977 5A/ 400V and 500V N-Channel IGBTs Intersil
3198 2N6978 5A/ 400V and 500V N-Channel IGBTs Intersil
3199 2N6985 125W 30 to 400MHz controlled Q broadband push-pull RF Power Transistor NPN silicon Motorola
3200 2N6990 Chip Type 2C2222A Geometry 0400 Polarity NPN Semicoa Semiconductor
3201 2N7021 MOSPOWER P-Channel Enhancement Mode Transistor 400V 0.11A Siliconix
3202 2N7022 MOSPOWER N-Channel Enhancement Mode Transistor 400V 0.18A Siliconix
3203 2N7057 MOSPOWER N-Channel Enhancement Mode Transistor 13A 400V 0.40 OHMS Siliconix
3204 2N7063 MOSPOWER N-Channel Enhancement Mode Transistor 9.5A 400V 0.60 ohms Siliconix
3205 2N7227 POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 400 Volt 0.315 Ohm Advanced Power Technology
3206 2SA1015 Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. USHA India LTD
3207 2SA1015Y 400mW PNP silicon transistor Micro Electronics
3208 2SA1366 150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 Isahaya Electronics Corporation
3209 2SA1400 PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 NEC
3210 2SA1400-Z PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 NEC


Datasheets found :: 38071
Page: | 103 | 104 | 105 | 106 | 107 | 108 | 109 | 110 | 111 |



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