No. |
Part Name |
Description |
Manufacturer |
31 |
1N416GM |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
32 |
1SV128 |
DIODE VHF~UHF BAND RF ATTENUATOR APPLICATIONS |
TOSHIBA |
33 |
1SV237 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
34 |
1SV252 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
35 |
1SV271 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
36 |
1SV312 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
37 |
23Z247SMD |
2 Watt Pulse Electrostatically Shielded, 500 mW Pulse, RF Pulse and Control Transformers |
Pulse Engineering |
38 |
2N1302 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
39 |
2N1303 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
40 |
2N1304 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
41 |
2N1305 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
42 |
2N1306 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
43 |
2N1307 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
44 |
2N1308 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
45 |
2N1309 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
46 |
2N1491 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
47 |
2N1492 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
48 |
2N1493 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
49 |
2N1613 |
Silicon NPN planar transistor for high speed switching and RF amplifiers |
AEG-TELEFUNKEN |
50 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
51 |
2N2193 |
Silicon NPN planar epitaxial transistor for high speed switchings and RF amplifiers |
AEG-TELEFUNKEN |
52 |
2N2218 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
53 |
2N2218A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
54 |
2N2219 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
55 |
2N2219A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
56 |
2N2221 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
57 |
2N2221A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
58 |
2N2222 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
59 |
2N2222A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
60 |
2N2631 |
NPN triple-diffused planar silicon RF Power Transistor |
RCA Solid State |
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