No. |
Part Name |
Description |
Manufacturer |
31 |
1N415F |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
32 |
1N415G |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
33 |
1N415GM |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
34 |
1N415H |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
35 |
1N416B |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
36 |
1N416C |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
37 |
1N416D |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
38 |
1N416E |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
39 |
1N416G |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
40 |
1N416GM |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
41 |
1SV128 |
DIODE VHF~UHF BAND RF ATTENUATOR APPLICATIONS |
TOSHIBA |
42 |
1SV237 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
43 |
1SV252 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
44 |
1SV271 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
45 |
1SV312 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
46 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
47 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
48 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
49 |
23Z247SMD |
2 Watt Pulse Electrostatically Shielded, 500 mW Pulse, RF Pulse and Control Transformers |
Pulse Engineering |
50 |
2N1302 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
51 |
2N1303 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
52 |
2N1304 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
53 |
2N1305 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
54 |
2N1306 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
55 |
2N1307 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
56 |
2N1308 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
57 |
2N1309 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
58 |
2N1491 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
59 |
2N1492 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
60 |
2N1493 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
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