No. |
Part Name |
Description |
Manufacturer |
91 |
2N3733 |
10W, 400-Mc Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
92 |
2N3819 |
N-Channel RF Amplifier |
Fairchild Semiconductor |
93 |
2N3819_D27Z |
N-Channel RF Amplifier |
Fairchild Semiconductor |
94 |
2N3819_D74Z |
N-Channel RF Amplifier |
Fairchild Semiconductor |
95 |
2N3839 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
96 |
2N3866 |
Silicon NPN overlay epitaxial planar RF transistor |
ICCE |
97 |
2N3866 |
Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
98 |
2N3924 |
NPN silicon RF power transistor |
Motorola |
99 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
100 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
101 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
102 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
103 |
2N3948 |
NPN silicon RF power transistor, ideal for CATV applications or military and industrial equipment |
Motorola |
104 |
2N3950 |
NPN silicon RF power transistor designed for high-power RF amplifier applications |
Motorola |
105 |
2N3950 |
NPN silicon RF power transistor designed for high-power RF amplifier applications |
Motorola |
106 |
2N3961 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
107 |
2N4012 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
108 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
109 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
110 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
111 |
2N4033 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
112 |
2N404 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
113 |
2N4427 |
Silicon NPN Overlay RF Transistor |
RCA Solid State |
114 |
2N4428 |
NPN silicon RF power transistor 0.75W - 500MHz |
Motorola |
115 |
2N4429 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
116 |
2N4440 |
Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
117 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
118 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
119 |
2N4957 |
PNP silicon annular small-signal RF transistor |
Motorola |
120 |
2N4958 |
PNP silicon annular small-signal RF transistor |
Motorola |
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