No. |
Part Name |
Description |
Manufacturer |
91 |
2N3293 |
NPN silicon transistor for TV and FM mixer, RF and IF amplifier |
Motorola |
92 |
2N3294 |
NPN silicon transistor for TV and FM mixer, RF and IF amplifier |
Motorola |
93 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
94 |
2N3375 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
95 |
2N3478 |
NPN RF Amp Transistor |
National Semiconductor |
96 |
2N3478 |
Silicon NPN Epitaxial planar RF transistor |
RCA Solid State |
97 |
2N3498 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
98 |
2N3499 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 35 hFE. |
Continental Device India Limited |
99 |
2N3500 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 20 hFE. |
Continental Device India Limited |
100 |
2N3501 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. |
Continental Device India Limited |
101 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
102 |
2N3553 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
103 |
2N3563 |
NPN Transistor - RF AMPS and Oscillator |
National Semiconductor |
104 |
2N3564 |
NPN Transistor - RF AMPS and Oscillator |
National Semiconductor |
105 |
2N3600 |
NPN Transistor - RF AMPS and Oscillator |
National Semiconductor |
106 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
107 |
2N3632 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
108 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
109 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
110 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
111 |
2N3662 |
NPN Transistor - RF AMPS and Oscillator |
National Semiconductor |
112 |
2N3663 |
NPN RF Transistor |
Fairchild Semiconductor |
113 |
2N3663 |
NPN Transistor - RF AMPS and Oscillator |
National Semiconductor |
114 |
2N3733 |
10W, 400-Mc Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
115 |
2N3819 |
N-Channel RF Amplifier |
Fairchild Semiconductor |
116 |
2N3819_D27Z |
N-Channel RF Amplifier |
Fairchild Semiconductor |
117 |
2N3819_D74Z |
N-Channel RF Amplifier |
Fairchild Semiconductor |
118 |
2N3825 |
NPN Transistor - RF AMPS and Oscillator |
National Semiconductor |
119 |
2N3839 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
120 |
2N3866 |
Silicon NPN overlay epitaxial planar RF transistor |
ICCE |
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