No. |
Part Name |
Description |
Manufacturer |
61 |
2N2857 |
NPN silicon RF small-signal transistor |
Motorola |
62 |
2N2857 |
Double-diffused epitaxial planar silicon RF power transistor |
RCA Solid State |
63 |
2N2876 |
NPN triple-diffused planar silicon RF Power Transistor |
RCA Solid State |
64 |
2N3118 |
Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment |
RCA Solid State |
65 |
2N3119 |
High-Power Silicon NPN Planar RF Tranzistor |
RCA Solid State |
66 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
67 |
2N3229 |
NPN RF power transistor |
RCA Solid State |
68 |
2N3283 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
69 |
2N3284 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
70 |
2N3285 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
71 |
2N3286 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
72 |
2N3291 |
NPN silicon transistor for TV and FM mixer, RF and IF amplifier |
Motorola |
73 |
2N3292 |
NPN silicon transistor for TV and FM mixer, RF and IF amplifier |
Motorola |
74 |
2N3293 |
NPN silicon transistor for TV and FM mixer, RF and IF amplifier |
Motorola |
75 |
2N3294 |
NPN silicon transistor for TV and FM mixer, RF and IF amplifier |
Motorola |
76 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
77 |
2N3375 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
78 |
2N3478 |
Silicon NPN Epitaxial planar RF transistor |
RCA Solid State |
79 |
2N3498 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
80 |
2N3499 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 35 hFE. |
Continental Device India Limited |
81 |
2N3500 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 20 hFE. |
Continental Device India Limited |
82 |
2N3501 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. |
Continental Device India Limited |
83 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
84 |
2N3553 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
85 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
86 |
2N3632 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
87 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
88 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
89 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
90 |
2N3663 |
NPN RF Transistor |
Fairchild Semiconductor |
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