No. |
Part Name |
Description |
Manufacturer |
31 |
FQU6N50C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary planar stripe, DMOS technology |
Fairchild Semiconductor |
32 |
HGTD6N50E1 |
6A/ 400V and 500V N-Channel IGBTs |
Intersil |
33 |
HGTD6N50E1S |
6A/ 400V and 500V N-Channel IGBTs |
Intersil |
34 |
IRFB16N50K |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
35 |
IXFH26N50 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
36 |
IXFH26N50Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
37 |
IXFH26N50Q |
HiPerFET Power MOSFETs |
IXYS Corporation |
38 |
IXFH26N55Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
39 |
IXFH36N55Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
40 |
IXFH36N55Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
41 |
IXFK66N50Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
42 |
IXFM26N50 |
HiPerFET Power MOSFETs |
IXYS Corporation |
43 |
IXFN66N50Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
44 |
IXFR26N50 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
45 |
IXFR26N50Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
46 |
IXFR66N50Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
47 |
IXFT26N50 |
HiPerFET Power MOSFETs |
IXYS Corporation |
48 |
IXFT26N50Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
49 |
IXFT26N50Q |
HiPerFET Power MOSFETs |
IXYS Corporation |
50 |
IXFX66N50Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
51 |
IXTC26N50P |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
52 |
IXTC26N50P |
PolarHV Power MOSFET |
IXYS Corporation |
53 |
IXTQ26N50PS |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
54 |
IXTQ36N50P |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
55 |
IXTT36N50P |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
56 |
IXTV26N50P |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
57 |
IXTV26N50PS |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
58 |
JT6N57 |
LSIs for Serial Port Controller with Built-in Non-Volatile Memory |
TOSHIBA |
59 |
KT866N51 |
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .01 |
Optek Technology |
60 |
KT866N55 |
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05 |
Optek Technology |
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