| No. |
Part Name |
Description |
Manufacturer |
| 61 |
KT876N51 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches |
Optek Technology |
| 62 |
KT876N55 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches |
Optek Technology |
| 63 |
L6N5 |
Sensitive Triacs (0.8A to 8A) |
Teccor Electronics |
| 64 |
M50FW016N5T |
16 Mbit 2Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory |
SGS Thomson Microelectronics |
| 65 |
M50FW016N5T |
16 Mbit 2Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory |
ST Microelectronics |
| 66 |
M50LPW116N5G |
16 MBIT (2MB X8, BOOT BLOCK) 3V SUPPLY LOW PIN COUNT FLASH MEMORY |
ST Microelectronics |
| 67 |
M50LPW116N5T |
16 Mbit 2Mb x8, Boot Block 3V Supply Low Pin Count Flash Memory |
SGS Thomson Microelectronics |
| 68 |
M50LPW116N5T |
16 Mbit 2Mb x8, Boot Block 3V Supply Low Pin Count Flash Memory |
ST Microelectronics |
| 69 |
MTH6N55 |
Power Field Effect Transistor |
Motorola |
| 70 |
MTM6N55 |
N-CHANNEL TMOS POWER FET 6A 550V 1.5 ohms |
Motorola |
| 71 |
MTM6N55 |
Power Field Effect Transistor |
Motorola |
| 72 |
MTV16N50E |
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM |
Motorola |
| 73 |
MTV16N50E |
16 Amp D3PAK Surface Mount Products, N-Channel, VDSS 500 |
ON Semiconductor |
| 74 |
MTV16N50E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 75 |
NTP6N50 |
OBSOLETE - Power MOSFET 6 Amps, 500 Volts |
ON Semiconductor |
| 76 |
NTP6N50-D |
Power MOSFET 6 Amps, 500 Volts N-Channel TO-220 |
ON Semiconductor |
| 77 |
OPB866N51 |
SLOTTED OPTICAL SWITCH |
QT Optoelectronics |
| 78 |
OPB866N55 |
SLOTTED OPTICAL SWITCH |
QT Optoelectronics |
| 79 |
PHB6N50E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 80 |
PHP6N50E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 81 |
PHX6N50E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 82 |
PRN10116N51R0J |
Bussed Resistor Network |
California Micro Devices Corp |
| 83 |
PRN10116N51R0JR |
BUSSED RESISTOR NETWORK |
California Micro Devices Corp |
| 84 |
PRN10116N51R0JT |
BUSSED RESISTOR NETWORK |
California Micro Devices Corp |
| 85 |
PRN10116N56R0J |
Bussed Resistor Network |
California Micro Devices Corp |
| 86 |
PRN10116N56R0JR |
BUSSED RESISTOR NETWORK |
California Micro Devices Corp |
| 87 |
PRN10116N56R0JT |
BUSSED RESISTOR NETWORK |
California Micro Devices Corp |
| 88 |
Q6006N5 |
600 V, 6 A triac |
Teccor Electronics |
| 89 |
Q8006N5 |
800 V, 6 A triac |
Teccor Electronics |
| 90 |
QK006N5 |
1000 V, 6 A triac |
Teccor Electronics |
| | | |
