| No. |
Part Name |
Description |
Manufacturer |
| 91 |
RFP6N50 |
6A/ 450V and 500V/ 1.250 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 92 |
SPA16N50C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 93 |
SPB16N50C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 94 |
SPI16N50C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 95 |
SPP16N50C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 96 |
SPW16N50C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 97 |
SSH6N55 |
N-Channel Power MOSFET |
Samsung Electronic |
| 98 |
SSM6N55 |
N-Channel Power MOSFET |
Samsung Electronic |
| 99 |
SSM6N55NU |
Small-signal MOSFET 2 in 1 |
TOSHIBA |
| 100 |
SSM6N56FE |
Small-signal MOSFET 2 in 1 |
TOSHIBA |
| 101 |
SSM6N57NU |
Small-signal MOSFET 2 in 1 |
TOSHIBA |
| 102 |
SSM6N58NU |
Small-signal MOSFET 2 in 1 |
TOSHIBA |
| 103 |
SSP6N55 |
N-Channel Power MOSFET |
Samsung Electronic |
| 104 |
STB6N52K3 |
N-channel 525 V, 1 Ohm, 5 A, D2PAK SuperMESH3(TM) Power MOSFET |
ST Microelectronics |
| 105 |
STD16N50M2 |
N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a DPAK package |
ST Microelectronics |
| 106 |
STD6N52K3 |
N-channel 525 V, 1 Ohm, 5 A, DPAK SuperMESH3(TM) Power MOSFET |
ST Microelectronics |
| 107 |
STE26N50 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE |
ST Microelectronics |
| 108 |
STE36N50 |
N Channel Enhancement Mode Power MOS Transistor in Isotop Package |
ST Microelectronics |
| 109 |
STF16N50M2 |
N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package |
ST Microelectronics |
| 110 |
STF16N50U |
N-channel 500 V, 0.47 Ohm, 15 A UltraFAST MESH(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| 111 |
STL36N55M5 |
N-channel 550 V, 0.066 Ohm typ., 22.5 A MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package |
ST Microelectronics |
| 112 |
STP16N50M2 |
N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a TO-220 package |
ST Microelectronics |
| 113 |
STP36N55M5 |
N-channel 550 V, 0.06 Ohm, 33 A, MDmesh(TM) V Power MOSFET in TO-220 package |
ST Microelectronics |
| 114 |
STP6N50 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
ST Microelectronics |
| 115 |
STP6N50FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
ST Microelectronics |
| 116 |
STW36N55M5 |
N-channel 550 V, 0.06 Ohm, 33 A, MDmesh(TM) V Power MOSFET in TO-247 package |
ST Microelectronics |
| 117 |
T16N5 |
Mains frequency thyristor |
IPRS Baneasa |
| 118 |
T16N5 |
16 AMPS 500V THYRISTOR |
IPRS Baneasa |
| 119 |
T16N5C |
Mains frequency thyristor |
IPRS Baneasa |
| 120 |
T16N5D |
Mains frequency thyristor |
IPRS Baneasa |
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