| No. |
Part Name |
Description |
Manufacturer |
| 31 |
15KP150 |
Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/211.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 268 V @ Ipp = 56 A. |
Panjit International Inc |
| 32 |
15KP150C |
Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/211.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 268 V @ Ipp = 56 A. |
Panjit International Inc |
| 33 |
15KP180 |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. |
Panjit International Inc |
| 34 |
15KP180C |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. |
Panjit International Inc |
| 35 |
15KP190A |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A. |
Panjit International Inc |
| 36 |
15KP190CA |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A. |
Panjit International Inc |
| 37 |
15KP200 |
Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/282.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 358 V @ Ipp = 42 A. |
Panjit International Inc |
| 38 |
15KP200C |
Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/282.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 358 V @ Ipp = 42 A. |
Panjit International Inc |
| 39 |
1617-35 |
35 Watts, 28 Volts, Pulsed Radar 1540 - 1660 MHz |
GHz Technology |
| 40 |
1617AM10 |
10 W, 18 V, 1500-1800 MHz common emitter transistor |
GHz Technology |
| 41 |
1618-35 |
35 W, 28 V, 1600-1800 MHz common base transistor |
GHz Technology |
| 42 |
1719-20 |
20 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
| 43 |
1719-35 |
35 W, 28 V, 1725-1850 MHz common base transistor |
GHz Technology |
| 44 |
1719-8 |
8 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
| 45 |
1819-35 |
35 W, 28 V, 1750-1850 MHz common base transistor |
GHz Technology |
| 46 |
1K2S-N048 |
Input voltage 200-260 VAC;output voltage 48 VDC;output current:25 A; 1.2 KW enclosed parallel power supply |
FranMar International |
| 47 |
1K5S-N048 |
Input voltage 200-260 VAC;output voltage 48 VDC;output current:32 A; 1.5 KW enclosed parallel power supply |
FranMar International |
| 48 |
1N3483 |
8 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 49 |
1N3829 |
Zener regulator diode. Nom zener voltage 6.8 V. 1 W. |
Motorola |
| 50 |
1N4565 |
Low-level temperature-compensated zener reference diode. Max voltage 0.048 V. |
Motorola |
| 51 |
1N4570 |
Low-level temperature-compensated zener reference diode. Max voltage 0.048 V. |
Motorola |
| 52 |
1N4575 |
Low-level temperature-compensated zener reference diode. Max voltage 0.048 V. |
Motorola |
| 53 |
1N4580 |
Low-level temperature-compensated zener reference diode. Max voltage 0.048 V. |
Motorola |
| 54 |
1N4692 |
6.8 volt zener diode |
Compensated Devices Incorporated |
| 55 |
1N4736 |
6.8 V, 1 W silicon zener diode |
BKC International Electronics |
| 56 |
1N4736 |
1 W silicon zener diode. Nominal zener voltage 6.8 V. |
Fairchild Semiconductor |
| 57 |
1N4736 |
1 WATT, 6.8 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 58 |
1N4736A |
6.8 V, 1 W silicon zener diode |
BKC International Electronics |
| 59 |
1N4736A |
Voltage regulator diode. Working voltage (nom) 6.8 V . |
Philips |
| 60 |
1N4746 |
18 V, 1 W silicon zener diode |
BKC International Electronics |
| | | |
