| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1N5255 |
500mW, 28 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 92 |
1N5255A |
28 V, 4.5 mA, zener diode |
Leshan Radio Company |
| 93 |
1N5255AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 28 V. Tolerance +-10%. |
Microsemi |
| 94 |
1N5255BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 28 V. Tolerance +-5%. |
Microsemi |
| 95 |
1N5255C |
28 V, 4.5 mA, zener diode |
Leshan Radio Company |
| 96 |
1N5255D |
28 V, 4.5 mA, zener diode |
Leshan Radio Company |
| 97 |
1N5255UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 28 V. |
Microsemi |
| 98 |
1N5266A |
68 V, 1.8 mA, zener diode |
Leshan Radio Company |
| 99 |
1N5266AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 68 V. Tolerance +-10%. |
Microsemi |
| 100 |
1N5266BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 68 V. Tolerance +-5%. |
Microsemi |
| 101 |
1N5266C |
68 V, 1.8 mA, zener diode |
Leshan Radio Company |
| 102 |
1N5266D |
68 V, 1.8 mA, zener diode |
Leshan Radio Company |
| 103 |
1N5266UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 68 V. |
Microsemi |
| 104 |
1N5355B |
18 V, 65 mA, 5 W glass passivated zener diode |
Fagor |
| 105 |
1N5355B |
18 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 106 |
1N5362B |
28 V, 50 mA, 5 W glass passivated zener diode |
Fagor |
| 107 |
1N5362B |
28 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 108 |
1N5373B |
68 V, 20 mA, 5 W glass passivated zener diode |
Fagor |
| 109 |
1N5373B |
68 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 110 |
1N5526A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 6.8 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 111 |
1N5526B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 6.8 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 112 |
1N5931B |
18 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 113 |
1N5945 |
1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 114 |
1N5945A |
1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 115 |
1N5945B |
68 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 116 |
1N5945C |
1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 117 |
1N5945D |
1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 118 |
1N6267 |
6.8 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 119 |
1N6267A |
6.8 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 120 |
1N6267C |
6.8 V, 10 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
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