No. |
Part Name |
Description |
Manufacturer |
61 |
1N4746 |
1 WATT, 18 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
62 |
1N4746A |
18 V, 1 W silicon zener diode |
BKC International Electronics |
63 |
1N4746A |
Voltage regulator diode. Working voltage (nom) 18 V . |
Philips |
64 |
1N4746A |
18 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
65 |
1N4760A |
68 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
66 |
1N4765 |
Low-level temperature-compensated zener reference diode. Max voltage 0.068 V. |
Motorola |
67 |
1N4767A |
Low-level temperature-compensated zener reference diode. Max voltage 0.028 V. |
Motorola |
68 |
1N4770 |
Low-level temperature-compensated zener reference diode. Max voltage 0.068 V. |
Motorola |
69 |
1N4772A |
Low-level temperature-compensated zener reference diode. Max voltage 0.028 V. |
Motorola |
70 |
1N5224A |
2.8 V, 20 mA, zener diode |
Leshan Radio Company |
71 |
1N5224AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.8 V. Tolerance +-10%. |
Microsemi |
72 |
1N5224BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.8 V. Tolerance +-5%. |
Microsemi |
73 |
1N5224C |
2.8 V, 20 mA, zener diode |
Leshan Radio Company |
74 |
1N5224D |
2.8 V, 20 mA, zener diode |
Leshan Radio Company |
75 |
1N5224UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.8 V. |
Microsemi |
76 |
1N5235 |
500 mW silicon zener diode. Nominal zener voltage 6.8 V. |
Fairchild Semiconductor |
77 |
1N5235 |
500mW, 6.8 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
78 |
1N5235A |
6.8 V, 20 mA, zener diode |
Leshan Radio Company |
79 |
1N5235AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 6.8 V. Tolerance +-10%. |
Microsemi |
80 |
1N5235BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 6.8 V. Tolerance +-5%. |
Microsemi |
81 |
1N5235C |
6.8 V, 20 mA, zener diode |
Leshan Radio Company |
82 |
1N5235D |
6.8 V, 20 mA, zener diode |
Leshan Radio Company |
83 |
1N5235UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 6.8 V. |
Microsemi |
84 |
1N5248 |
500mW, 18 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
85 |
1N5248A |
18 V, 7.0 mA, zener diode |
Leshan Radio Company |
86 |
1N5248AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 18 V. Tolerance +-10%. |
Microsemi |
87 |
1N5248BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 18 V. Tolerance +-5%. |
Microsemi |
88 |
1N5248C |
18 V, 7.0 mA, zener diode |
Leshan Radio Company |
89 |
1N5248D |
18 V, 7.0 mA, zener diode |
Leshan Radio Company |
90 |
1N5248UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 18 V. |
Microsemi |
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