| No. |
Part Name |
Description |
Manufacturer |
| 3301 |
MRAL2023-12 |
MICroAMP 22V operation, broadband 2000-2300MHz, gold metalized |
TRW |
| 3302 |
MRAL2023-12H |
MICroAMP, 22V operation, Broadband 2000-2300MHz, diffused ballast resistors, gold metalized, 12W |
TRW |
| 3303 |
MRAL2023-3 |
MICroAMP 22V operation, broadband 2000-2300MHz, gold metalized |
TRW |
| 3304 |
MRAL2023-3H |
MICroAMP, 22V operation, Broadband 2000-2300MHz, diffused ballast resistors, gold metalized, 3W |
TRW |
| 3305 |
MRAL2023-6 |
MICroAMP 22V operation, broadband 2000-2300MHz, gold metalized |
TRW |
| 3306 |
MRAL2023-6H |
MICroAMP, 22V operation, Broadband 2000-2300MHz, diffused ballast resistors, gold metalized, 6W |
TRW |
| 3307 |
MRAL2023-H-Series |
MICroAMP, 22V operation, Broadband 2000-2300MHz, diffused ballast resistors, gold metalized |
TRW |
| 3308 |
MS1V-TK |
SM Watch Crystal |
Golledge |
| 3309 |
MX1V |
Low Frequency Cylindrical Crystal |
Golledge |
| 3310 |
MX1V-O |
Low Frequency Cylindrical Crystal |
Golledge |
| 3311 |
MX1V-ON |
Low Frequency Cylindrical Crystal |
Golledge |
| 3312 |
MX1V-T |
Low Frequency Cylindrical Crystal |
Golledge |
| 3313 |
MX1V-TK |
Low Frequency Cylindrical Crystal |
Golledge |
| 3314 |
MX1V-TS |
Low Frequency Cylindrical Crystal |
Golledge |
| 3315 |
NL6EBX-DC110V |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. Single side stable. Contact material: gold-clad silver. |
Matsushita Electric Works(Nais) |
| 3316 |
NL6EBX-DC110V-1 |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. Single side stable. Contact material: gold-cap over silver palladium. |
Matsushita Electric Works(Nais) |
| 3317 |
NL6EBX-L2-DC110V |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. 2 coil latching. Contact material: gold-clad silver. |
Matsushita Electric Works(Nais) |
| 3318 |
NL6EBX-L2-DC110V-1 |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. 2 coil latching. Contact material: gold-cap over silver palladium. |
Matsushita Electric Works(Nais) |
| 3319 |
OA1154 |
55 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3320 |
OA1161 |
140 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3321 |
OA1180 |
30 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3322 |
OA1180 |
Germanium gold PIN switching diode |
Felvezeto Katalogus 1966 |
| 3323 |
OA1180 |
Germanium gold wire diode |
TUNGSRAM |
| 3324 |
OA1180 |
Germanium gold wire switch diode |
TUNGSRAM |
| 3325 |
OA1182 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3326 |
OA1182 |
Germanium gold PIN universal purpose diode |
Felvezeto Katalogus 1966 |
| 3327 |
OA1182 |
Germanium gold wire switch diode |
TUNGSRAM |
| 3328 |
OA1182D |
Germanium gold wire diode |
TUNGSRAM |
| 3329 |
OA180 |
20 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3330 |
OA180 |
Germanium gold PIN switching diode |
Felvezeto Katalogus 1966 |
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