| No. |
Part Name |
Description |
Manufacturer |
| 3391 |
PTF10149 |
70 Watts, 921�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3392 |
PTF10153 |
60 Watts, 1.8�2.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3393 |
PTF10154 |
85 Watts, 1.93�1.99 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3394 |
PTF10160 |
85 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3395 |
PTF10161 |
165 Watts, 869�894 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3396 |
PTF10162 |
18 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3397 |
PTF10193 |
12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3398 |
PTF10195 |
125 Watts, 869�894 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3399 |
PTF102027 |
40 Watts, 925�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3400 |
PTF102028 |
18 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3401 |
Q62703-F106 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 3402 |
Q62703-F107 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 3403 |
Q62703-F108 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 3404 |
RCA0610-30 |
30-W, Broadband, 620-to-960-MHz, Emitter-Ballasted, Gold-Metallized NPN RF Power Transistor |
RCA Solid State |
| 3405 |
SD1290 |
50MHz 12.5V 40W Gold Metallization NPN silicon RF Transistor |
SGS Thomson Microelectronics |
| 3406 |
SD1317 |
UHF Small signal 4GHz very low noise, gold metallized NPN RF transistor |
SGS Thomson Microelectronics |
| 3407 |
SD1331 |
UHF Small signal 6GHz, very low noise, gold metallized NPN RF transistor |
SGS Thomson Microelectronics |
| 3408 |
SD1332 |
UHF Small signal 5.5GHz, very low noise, gold metallized NPN RF transistor |
SGS Thomson Microelectronics |
| 3409 |
SD1333 |
UHF Small signal 5.5GHz, very low noise, gold metallized NPN RF transistor |
SGS Thomson Microelectronics |
| 3410 |
SD1425 |
800-960MHz 30W 24V gold metallized NPN RF transistor, high linearity Class AB operation |
SGS Thomson Microelectronics |
| 3411 |
SD1511-08 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 3412 |
SD1524-1 |
Gold Metallized silicon NPN power RF transistor for IFF/DME applications |
SGS Thomson Microelectronics |
| 3413 |
SD1526-01 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 3414 |
SD1526-08 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 3415 |
SD1527-08 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 3416 |
SD1528-8 |
Gold Metallized NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
| 3417 |
SD1920-02 |
Gold metalliezed N-Channel MOS field-effect RF power transistor 50V, up to 200MHz 300W Class AB |
SGS Thomson Microelectronics |
| 3418 |
SD1930 |
Gold metallized N-Channel MOS field-effect RF transistor 28V 400MHz 5W |
SGS Thomson Microelectronics |
| 3419 |
SD4012 |
Gold metallized epitaxial silicon NPN planar RF transistor 3W |
SGS Thomson Microelectronics |
| 3420 |
SFD037A |
Gold bounded germanium signal diode - general purpose |
SESCOSEM |
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