| No. |
Part Name |
Description |
Manufacturer |
| 3331 |
OA180 |
GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
| 3332 |
OA182 |
Germanium gold PIN universal purpose diode |
Felvezeto Katalogus 1966 |
| 3333 |
OA47 |
Germanium small signal diode (gold bonded) |
mble |
| 3334 |
OA47 |
Germanium gold bonded diode, general purpose |
Mullard |
| 3335 |
OA47 |
GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
| 3336 |
OA47 |
Gold Bonded Diode |
Philips |
| 3337 |
OA47 |
Germanium gold wire switch diode |
VALVO |
| 3338 |
OA5 |
Germanium Gold Bonded Diode |
Philips |
| 3339 |
OA5 |
Germanium gold wire general purpose diode |
VALVO |
| 3340 |
OA7 |
Germanium Gold Bonded Diode |
Philips |
| 3341 |
OA7 |
Germanium gold wire switch diode |
VALVO |
| 3342 |
OA9 |
Germanium Gold Bonded Diode |
Philips |
| 3343 |
OA9 |
Germanium gold wire switch diode |
VALVO |
| 3344 |
OA90 |
GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
| 3345 |
P121 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 3346 |
P122 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 3347 |
P123 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 3348 |
P124 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 3349 |
P281 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 3350 |
P282 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 3351 |
PMB7850 |
E -GOLD+ V3 GSM / GPRS Single Chip Baseb and IC |
Infineon |
| 3352 |
PMB7860 |
E -GOLDlite Lowest Cost GSM/GPRS/Base band IC |
Infineon |
| 3353 |
PMB8875 |
S-GOLDlite- Advanced Single - Chip GSM/GPRS Baseband Controller |
Infineon |
| 3354 |
PMB8876 |
S-GOLD2-Multimedia Engine with Advanced EDGE Modem Functionality |
Infineon |
| 3355 |
PRA |
High Precision Resistor Arrays, Very Short Deliveries Even on Special Orders, High Stability Passivated Nichrome Resistive Layer, Ratio Tolerance to 0.01%, Pre-Tinned or Gold Terminations over Nickel Barrier |
Vishay |
| 3356 |
PT8811A |
UHF Power Transistor 10W 12.5V gold metallization |
Motorola |
| 3357 |
PT9700 |
1.5W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 3358 |
PT9700-series |
UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 3359 |
PT9701B |
5W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
| 3360 |
PT9702B |
20W UHF Power Transistor 28V 400MHz, gold metalized, class A, AB or C operation, common emitter, isolated package |
TRW |
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