No. |
Part Name |
Description |
Manufacturer |
3301 |
2N6247 |
Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. |
General Electric Solid State |
3302 |
2N6248 |
Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. |
General Electric Solid State |
3303 |
2N6249 |
15A silicon 175W power, High-Voltage NPN transistor |
Motorola |
3304 |
2N6250 |
15A silicon 175W power, High-Voltage NPN transistor |
Motorola |
3305 |
2N6251 |
15A silicon 175W power, High-Voltage NPN transistor |
Motorola |
3306 |
2N6253 |
45V high power silicon NPN transistor |
Comset Semiconductors |
3307 |
2N6253 |
High-power silicon N-P-N transistor. 55V, 115W. |
General Electric Solid State |
3308 |
2N6253 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
3309 |
2N6254 |
80V high power silicon NPN transistor |
Comset Semiconductors |
3310 |
2N6254 |
High-power silicon N-P-N transistor. 100V, 150W. |
General Electric Solid State |
3311 |
2N6254 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
3312 |
2N6257 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
3313 |
2N6257 |
High-Power NPN Silicon Transistor |
Motorola |
3314 |
2N6258 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
3315 |
2N6259 |
High voltage, high power transistor. 170V, 250W. |
General Electric Solid State |
3316 |
2N6259 |
High voltage, high power transistor. 170V, 250W. |
General Electric Solid State |
3317 |
2N6259 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
3318 |
2N6262 |
High voltage silicon N-P-N transistor. 170V, 150W. |
General Electric Solid State |
3319 |
2N6262 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
3320 |
2N6274 |
50A silicon 250W high-power, NPN transistor |
Motorola |
3321 |
2N6275 |
50A silicon 250W high-power, NPN transistor |
Motorola |
3322 |
2N6276 |
50A silicon 250W high-power, NPN transistor |
Motorola |
3323 |
2N6277 |
50A silicon 250W high-power, NPN transistor |
Motorola |
3324 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
3325 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
3326 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
3327 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
3328 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
3329 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
3330 |
2N6304 |
NPN silicon high frequency transistor 1.4GHz - 10mAdc |
Motorola |
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