No. |
Part Name |
Description |
Manufacturer |
3331 |
2N6305 |
NPN silicon high frequency transistor 1.2GHz - 10mAdc |
Motorola |
3332 |
2N6306 |
8A high-voltage NPN silicon 125W power NPN transistor |
Motorola |
3333 |
2N6307 |
8A high-voltage NPN silicon 125W power NPN transistor |
Motorola |
3334 |
2N6308 |
8A high-voltage NPN silicon 125W power NPN transistor |
Motorola |
3335 |
2N6322 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
3336 |
2N6322 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
3337 |
2N6324 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
3338 |
2N6324 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
3339 |
2N6338 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
3340 |
2N6338 |
25A 200W high-power NPN silicon transistor |
Motorola |
3341 |
2N6338 |
High Power NPN Silicon Transistor |
ON Semiconductor |
3342 |
2N6338-D |
High-Power NPN Silicon Transistors |
ON Semiconductor |
3343 |
2N6338A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
3344 |
2N6339 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
3345 |
2N6339 |
25A 200W high-power NPN silicon transistor |
Motorola |
3346 |
2N6339A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
3347 |
2N6340 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
3348 |
2N6340 |
25A 200W high-power NPN silicon transistor |
Motorola |
3349 |
2N6340A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
3350 |
2N6341 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
3351 |
2N6341 |
25A 200W high-power NPN silicon transistor |
Motorola |
3352 |
2N6341A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
3353 |
2N6371 |
40V high power silicon NPN transistor |
Comset Semiconductors |
3354 |
2N6371 |
High-power silicon N-P-N transistor. 50V, 117W. |
General Electric Solid State |
3355 |
2N6371 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
3356 |
2N6420 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
3357 |
2N6420 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
3358 |
2N6420 |
Complementary Medium-Power High Voltage Power Transistor 35W 1A |
Motorola |
3359 |
2N6421 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
3360 |
2N6421 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
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