| No. |
Part Name |
Description |
Manufacturer |
| 3391 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 3392 |
2N6515-D |
High Voltage Transistors |
ON Semiconductor |
| 3393 |
2N6515RLRM |
High Voltage Transistors |
ON Semiconductor |
| 3394 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 3395 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 3396 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 3397 |
2N6517 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 3398 |
2N6517 |
High Voltage Transistors |
ON Semiconductor |
| 3399 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 3400 |
2N6517RLRA |
High Voltage Transistors |
ON Semiconductor |
| 3401 |
2N6517RLRP |
High Voltage Transistors |
ON Semiconductor |
| 3402 |
2N6518 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 3403 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 3404 |
2N6519 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 3405 |
2N6519 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 3406 |
2N6519 |
High Voltage Transistors |
ON Semiconductor |
| 3407 |
2N6519 |
High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 3408 |
2N6519RLRA |
High Voltage Transistors |
ON Semiconductor |
| 3409 |
2N6520 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 3410 |
2N6520 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 3411 |
2N6520 |
High Voltage Transistors |
ON Semiconductor |
| 3412 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 3413 |
2N6520RL1 |
High Voltage Transistors |
ON Semiconductor |
| 3414 |
2N6520RLRA |
High Voltage Transistors |
ON Semiconductor |
| 3415 |
2N6520RLRM |
High Voltage Transistors |
ON Semiconductor |
| 3416 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 3417 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 3418 |
2N6547 |
HIGH POWER NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
| 3419 |
2N6547 |
HIGH POWER NPN SILICON TRANSISTOR |
ST Microelectronics |
| 3420 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
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