No. |
Part Name |
Description |
Manufacturer |
3361 |
BF256L |
N-Channel Epitaxial Planar Silicon Field Effect Transistor |
Texas Instruments |
3362 |
BF256LA |
N-Channel Epitaxial Planar Silicon Field Effect Transistor |
Texas Instruments |
3363 |
BF256LB |
N-Channel Epitaxial Planar Silicon Field Effect Transistor |
Texas Instruments |
3364 |
BF256LC |
N-Channel Epitaxial Planar Silicon Field Effect Transistor |
Texas Instruments |
3365 |
BF350 |
N-Channel Silicon Dualgate MOS planar Field Effect Transistor |
Texas Instruments |
3366 |
BF351 |
N-Channel Silicon Dualgate MOS planar Field Effect Transistor |
Texas Instruments |
3367 |
BF352 |
N-Channel Silicon Dualgate MOS planar Field Effect Transistor |
Texas Instruments |
3368 |
BF353 |
N-Channel Silicon Dualgate MOS planar Field Effect Transistor |
Texas Instruments |
3369 |
BF410 |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
3370 |
BF410A |
N-channel silicon field-effect transistors |
Philips |
3371 |
BF410A |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
3372 |
BF410B |
N-channel silicon field-effect transistors |
Philips |
3373 |
BF410B |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
3374 |
BF410C |
N-channel silicon field-effect transistors |
Philips |
3375 |
BF410C |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
3376 |
BF410D |
N-channel silicon field-effect transistors |
Philips |
3377 |
BF410D |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
3378 |
BF510 |
N-channel silicon field-effect transistors |
Philips |
3379 |
BF511 |
N-channel silicon field-effect transistors |
Philips |
3380 |
BF512 |
N-channel silicon field-effect transistors |
Philips |
3381 |
BF513 |
N-channel silicon field-effect transistors |
Philips |
3382 |
BF545A |
N-channel silicon junction field-effect transistors |
Philips |
3383 |
BF545B |
N-channel silicon junction field-effect transistors |
Philips |
3384 |
BF545C |
N-channel silicon junction field-effect transistors |
Philips |
3385 |
BF556A |
N-channel silicon junction field-effect transistors |
Philips |
3386 |
BF556B |
N-channel silicon junction field-effect transistors |
Philips |
3387 |
BF556C |
N-channel silicon junction field-effect transistors |
Philips |
3388 |
BF960 |
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE |
Vishay |
3389 |
BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
TEMIC |
3390 |
BF961 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
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