| No. |
Part Name |
Description |
Manufacturer |
| 3481 |
BSS138 |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 3482 |
BSS138-7 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 3483 |
BSS138DW-7-F |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 3484 |
BSS138K |
50V N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 3485 |
BSS138W |
50V N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 3486 |
BSS138W-7 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 3487 |
BSS84 |
P-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 3488 |
BSS84-7 |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 3489 |
BSS8402DW-7 |
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 3490 |
BSS84V |
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 3491 |
BSS84V-7 |
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 3492 |
BSS84W-7-F |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 3493 |
BST72A |
N-channel enhancement mode field-effect transistor |
Philips |
| 3494 |
BST72A-03 |
N-channel enhancement mode field-effect transistor |
Philips |
| 3495 |
BST82 |
N-channel enhancement mode field-effect transistor |
Philips |
| 3496 |
BSV78 |
Field effect transistor |
mble |
| 3497 |
BSV78 |
Silicon n channel field effect transistor, Junction FET |
Mullard |
| 3498 |
BSV79 |
Field effect transistor |
mble |
| 3499 |
BSV79 |
Silicon n channel field effect transistor, Junction FET |
Mullard |
| 3500 |
BSV80 |
Field effect transistor |
mble |
| 3501 |
BSV80 |
Silicon n channel field effect transistor, Junction FET |
Mullard |
| 3502 |
BSV81 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 3503 |
BSV81 |
Silicon n channel field effect transistor, insulated GATE FET (MOST) |
Mullard |
| 3504 |
BWD |
Aluminum Housed Wirewound Resistors, Anodized aluminum casing to utilize heat-sink effect, Self-protecting, Short circuit proof, Protection according to IP 54 |
Vishay |
| 3505 |
C7390-02 |
Effective X-ray tube voltage range:40 to 160kV; resolution: 512mm:1280pixels; 256mm:640pixels; W-ray line sensor camera |
Hamamatsu Corporation |
| 3506 |
C7390-07 |
Effective X-ray tube voltage range:40 to 160kV; resolution: 512mm:1280pixels; 256mm:640pixels; W-ray line sensor camera |
Hamamatsu Corporation |
| 3507 |
C7390-12 |
Effective X-ray tube voltage range:40 to 160kV; resolution: 512mm:1280pixels; 256mm:640pixels; W-ray line sensor camera |
Hamamatsu Corporation |
| 3508 |
C7390-17 |
Effective X-ray tube voltage range:40 to 160kV; resolution: 512mm:1280pixels; 256mm:640pixels; W-ray line sensor camera |
Hamamatsu Corporation |
| 3509 |
CDB4812 |
Fixed Function Multi-Effects Audio Processor |
Cirrus Logic |
| 3510 |
CEA3055 |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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