| No. |
Part Name |
Description |
Manufacturer |
| 3451 |
BSS123-7 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 3452 |
BSS138 |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 3453 |
BSS138 |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 3454 |
BSS138-7 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 3455 |
BSS138DW-7-F |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 3456 |
BSS138K |
50V N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 3457 |
BSS138W |
50V N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 3458 |
BSS138W-7 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 3459 |
BSS84 |
P-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 3460 |
BSS84-7 |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 3461 |
BSS8402DW-7 |
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 3462 |
BSS84V |
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 3463 |
BSS84V-7 |
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 3464 |
BSS84W-7-F |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
| 3465 |
BST72A |
N-channel enhancement mode field-effect transistor |
Philips |
| 3466 |
BST72A-03 |
N-channel enhancement mode field-effect transistor |
Philips |
| 3467 |
BST82 |
N-channel enhancement mode field-effect transistor |
Philips |
| 3468 |
BSV78 |
Field effect transistor |
mble |
| 3469 |
BSV78 |
Silicon n channel field effect transistor, Junction FET |
Mullard |
| 3470 |
BSV79 |
Field effect transistor |
mble |
| 3471 |
BSV79 |
Silicon n channel field effect transistor, Junction FET |
Mullard |
| 3472 |
BSV80 |
Field effect transistor |
mble |
| 3473 |
BSV80 |
Silicon n channel field effect transistor, Junction FET |
Mullard |
| 3474 |
BSV81 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 3475 |
BSV81 |
Silicon n channel field effect transistor, insulated GATE FET (MOST) |
Mullard |
| 3476 |
BWD |
Aluminum Housed Wirewound Resistors, Anodized aluminum casing to utilize heat-sink effect, Self-protecting, Short circuit proof, Protection according to IP 54 |
Vishay |
| 3477 |
C7390-02 |
Effective X-ray tube voltage range:40 to 160kV; resolution: 512mm:1280pixels; 256mm:640pixels; W-ray line sensor camera |
Hamamatsu Corporation |
| 3478 |
C7390-07 |
Effective X-ray tube voltage range:40 to 160kV; resolution: 512mm:1280pixels; 256mm:640pixels; W-ray line sensor camera |
Hamamatsu Corporation |
| 3479 |
C7390-12 |
Effective X-ray tube voltage range:40 to 160kV; resolution: 512mm:1280pixels; 256mm:640pixels; W-ray line sensor camera |
Hamamatsu Corporation |
| 3480 |
C7390-17 |
Effective X-ray tube voltage range:40 to 160kV; resolution: 512mm:1280pixels; 256mm:640pixels; W-ray line sensor camera |
Hamamatsu Corporation |
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