| No. |
Part Name |
Description |
Manufacturer |
| 3481 |
IRF243 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. |
General Electric Solid State |
| 3482 |
IRF243 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 16A |
Siliconix |
| 3483 |
IRF250 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 3484 |
IRF250 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 30A |
Siliconix |
| 3485 |
IRF251 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 3486 |
IRF251 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 30A |
Siliconix |
| 3487 |
IRF252 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A. |
General Electric Solid State |
| 3488 |
IRF252 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 25A |
Siliconix |
| 3489 |
IRF253 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 25A. |
General Electric Solid State |
| 3490 |
IRF253 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 25A |
Siliconix |
| 3491 |
IRF320 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
| 3492 |
IRF321 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
| 3493 |
IRF322 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 3494 |
IRF323 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 3495 |
IRF330 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 3496 |
IRF330 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A |
Siliconix |
| 3497 |
IRF331 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 3498 |
IRF331 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 5.5A |
Siliconix |
| 3499 |
IRF332 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 3500 |
IRF332 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 4.5A |
Siliconix |
| 3501 |
IRF333 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 3502 |
IRF333 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 4.5A |
Siliconix |
| 3503 |
IRF340 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 10A |
Siliconix |
| 3504 |
IRF341 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 10A |
Siliconix |
| 3505 |
IRF342 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 8A |
Siliconix |
| 3506 |
IRF343 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 8A |
Siliconix |
| 3507 |
IRF350 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 15A. |
General Electric Solid State |
| 3508 |
IRF350 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 15A |
Siliconix |
| 3509 |
IRF351 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 15A. |
General Electric Solid State |
| 3510 |
IRF351 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 15A |
Siliconix |
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