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Datasheets for ENHANC

Datasheets found :: 8395
Page: | 114 | 115 | 116 | 117 | 118 | 119 | 120 | 121 | 122 |
No. Part Name Description Manufacturer
3511 IRF352 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
3512 IRF352 MOSPOWER N-Channel Enhancement Mode Transistor 400V 13A Siliconix
3513 IRF353 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
3514 IRF353 MOSPOWER N-Channel Enhancement Mode Transistor 350V 13A Siliconix
3515 IRF420 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
3516 IRF421 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
3517 IRF422 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
3518 IRF423 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
3519 IRF430 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
3520 IRF430 MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A Siliconix
3521 IRF431 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
3522 IRF431 MOSPOWER N-Channel Enhancement Mode Transistor 450V 4.5A Siliconix
3523 IRF432 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
3524 IRF432 MOSPOWER N-Channel Enhancement Mode Transistor 500V 4A Siliconix
3525 IRF433 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
3526 IRF433 MOSPOWER N-Channel Enhancement Mode Transistor 450V 4A Siliconix
3527 IRF440 MOSPOWER N-Channel Enhancement Mode Transistor 500V 8A Siliconix
3528 IRF441 MOSPOWER N-Channel Enhancement Mode Transistor 450V 8A Siliconix
3529 IRF442 MOSPOWER N-Channel Enhancement Mode Transistor 500V 7A Siliconix
3530 IRF443 MOSPOWER N-Channel Enhancement Mode Transistor 450V 7A Siliconix
3531 IRF450 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
3532 IRF450 MOSPOWER N-Channel Enhancement Mode Transistor 500V 13A Siliconix
3533 IRF451 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
3534 IRF451 MOSPOWER N-Channel Enhancement Mode Transistor 450V 13A Siliconix
3535 IRF452 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
3536 IRF452 MOSPOWER N-Channel Enhancement Mode Transistor 500V 12A Siliconix
3537 IRF453 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
3538 IRF453 MOSPOWER N-Channel Enhancement Mode Transistor 450V 12A Siliconix
3539 IRF460 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS SemeLAB
3540 IRF510 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State


Datasheets found :: 8395
Page: | 114 | 115 | 116 | 117 | 118 | 119 | 120 | 121 | 122 |



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